Aly Arafa H, Mohamed B A, Al-Dossari M, Mohamed D, Awasthi S K, Sillanpää Mika
TH-PPM Group, Physics Department, Faculty of Sciences, Beni-Suef University, Beni Suef, 62514, Egypt.
Department of Physics, Faculty of Science, King Khalid University, Abha, 62529, Saudi Arabia.
Sci Rep. 2023 Nov 1;13(1):18876. doi: 10.1038/s41598-023-45680-5.
Present research work deals with the extremely sensitive pressure-sensing capabilities of defective one-dimensional photonic crystal structure (GaP/SiO)N/AlO/(GaP/SiO)N. The proposed structure is realized by putting a defective layer of material AlO in the middle of a structure consisting of alternating layers of GaP and SiO. The transfer matrix method has been employed to examine the transmission characteristics of the proposed defective one-dimensional photonic crystal in addition to MATLAB software. An external application of the hydrostatic pressure on the proposed structure is responsible for the change in the position and intensity of defect mode inside the photonic band gap of the structure due to pressure-dependent refractive index properties of the materials being used in the design of the sructure. Additionally, the dependence of the transmission properties of the structure on other parameters like incident angle and defect layer thickness has also studied. The theoretical obtained numeric values of the quality factor and sensitivity are 17,870 and 72 nm/GPa respectively. These results are enough to support our claim that the present design can be used as an ultra-sensitive pressure sensor.
目前的研究工作涉及缺陷一维光子晶体结构(GaP/SiO)N/AlO/(GaP/SiO)N的极其灵敏的压力传感能力。所提出的结构是通过在由GaP和SiO交替层组成的结构中间放置一层AlO缺陷层来实现的。除了MATLAB软件外,还采用了传输矩阵法来研究所提出的缺陷一维光子晶体的传输特性。在所提出的结构上施加外部静水压力,由于结构设计中所使用材料的压力相关折射率特性,导致结构光子带隙内缺陷模式的位置和强度发生变化。此外,还研究了结构的传输特性对入射角和缺陷层厚度等其他参数的依赖性。理论上获得的品质因数和灵敏度的数值分别为17,870和72 nm/GPa。这些结果足以支持我们的观点,即目前的设计可作为一种超灵敏压力传感器。