Mariani Federica, Decataldo Francesco, Bonafè Filippo, Tessarolo Marta, Cramer Tobias, Gualandi Isacco, Fraboni Beatrice, Scavetta Erika
Department of Industrial Chemistry "Toso Montanari", Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy.
Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.
ACS Appl Mater Interfaces. 2024 Nov 13;16(45):61446-61456. doi: 10.1021/acsami.3c10576. Epub 2023 Nov 15.
The brain exhibits extraordinary information processing capabilities thanks to neural networks that can operate in parallel with minimal energy consumption. Memory and learning require the creation of new neural networks through the long-term modification of the structure of the synapses, a phenomenon called long-term plasticity. Here, we use an organic electrochemical transistor to simulate long-term potentiation and depotentiation processes. Similarly to what happens in a synapse, the polymerization of the 3,4-ethylenedioxythiophene (EDOT) on the gate electrode modifies the structure of the device and boosts the ability of the gate potential to modify the conductivity of the channel. Operando AFM measurements were carried out to demonstrate the correlation between neuromorphic behavior and modification of the gate electrode. Long-term enhancement depends on both the number of pulses used and the gate potential, which generates long-term potentiation when a threshold of +0.7 V is overcome. Long-term depotentiation occurs by applying a +3.0 V potential and exploits the overoxidation of the deposited PEDOT:PSS. The induced states are stable for at least 2 months. The developed device shows very interesting characteristics in the field of neuromorphic electronics.
由于神经网络能够以最小的能量消耗并行运行,大脑展现出非凡的信息处理能力。记忆和学习需要通过突触结构的长期改变来创建新的神经网络,这一现象被称为长期可塑性。在此,我们使用有机电化学晶体管来模拟长期增强和减弱过程。与突触中发生的情况类似,3,4-乙撑二氧噻吩(EDOT)在栅电极上的聚合改变了器件的结构,并增强了栅极电位改变沟道电导率的能力。进行了原位原子力显微镜测量,以证明神经形态行为与栅电极修饰之间的相关性。长期增强取决于所使用的脉冲数量和栅极电位,当超过 +0.7 V 的阈值时会产生长期增强。通过施加 +3.0 V 的电位并利用沉积的聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)的过氧化作用可实现长期减弱。诱导状态至少稳定 2 个月。所开发的器件在神经形态电子学领域展现出非常有趣的特性。