探索具有相干沟道的氮化镓基功率高电子迁移率晶体管的潜力。

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel.

作者信息

Chen Xinghuan, Wang Fangzhou, Wang Zeheng, Huang Jing-Kai

机构信息

The China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China.

Songshan Lake Materials Laboratory, Dongguan 523808, China.

出版信息

Micromachines (Basel). 2023 Oct 31;14(11):2041. doi: 10.3390/mi14112041.

DOI:10.3390/mi14112041

PMID:38004899

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10672858/

Abstract

The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimensional electron sea. The proposed device is investigated using the Silvaco simulation tool, which has been calibrated against experimental data. Numerical simulations prove that the proposed device has a very high on-state current above 3 A/mm, while the breakdown voltage (above 800 V) is not significantly affected. The calculated Johnson's and Baliga's figure-of-merits highlight the promise of using such a coherent channel for enhancing the performance of GaN HEMTs in power electronics applications.

摘要

氮化镓（GaN）行业一直要求进一步提高基于GaN的高电子迁移率晶体管（HEMT）的功率传输能力。本文提出了一种具有高功率传输能力的新型增强型GaN HEMT，它利用了一个能够形成三维电子海的相干沟道。使用Silvaco模拟工具对所提出的器件进行了研究，该工具已根据实验数据进行了校准。数值模拟证明，所提出的器件具有非常高的导通电流，高于3 A/mm，而击穿电压（高于800 V）没有受到显著影响。计算得出的约翰逊优值和巴利加优值突出了使用这种相干沟道来提高GaN HEMT在电力电子应用中性能的前景。