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溅射薄膜均匀性随侵蚀沟槽尺寸的演变机制:综合模拟与实验

Evolution Mechanism of Sputtered Film Uniformity with the Erosion Groove Size: Integrated Simulation and Experiment.

作者信息

Zhu Guo, Yang Yutong, Xiao Baijun, Gan Zhiyin

机构信息

School of Mechanical & Electrical Engineering, Hunan City University, Yiyang 413000, China.

School of Mechanical Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China.

出版信息

Molecules. 2023 Nov 18;28(22):7660. doi: 10.3390/molecules28227660.

Abstract

In this work, Cu thin films were experimentally fabricated at different target-substrate distances by 2-inch and 4-inch circular planar magnetron targets. Meanwhile, the sputtering deposition of Cu thin films was investigated via an integrated multiscale simulation, where the magnetron sputtering discharge was modeled using the Monte Carlo (MC) method, and the sputtered particle transport was simulated using a coupled Monte Carlo (MC) and molecular dynamics (MD) method. Experimental results indicated that, as the target-substrate distance increased from 30 to 120 mm, the film thickness distribution of the 2-inch target sputtering changed from a bell-shaped curve to a line-shaped curve, while that of the 4-inch target sputtering varied from a saddle-shaped curve to a line-shaped curve. The simulation results were accordant with the experimental results. The simulation results revealed that, at a target-substrate distance of 30 mm, the sputtering particle flow from the 2-inch target overlapped strongly near the substrate center, leading to a bell-shaped film thickness distribution, while the increased diameter of the erosion groove on the 4-inch target reduced the superposition effect of the sputtering particle flow near the substrate center, resulting in a saddle-shaped film thickness distribution. In addition, when the target-substrate distance ranged from 30 to 120 mm, the film thickness uniformity of 4-inch target sputtering was superior to that of 2-inch target sputtering, and the underlying mechanism was discussed in detail.

摘要

在本工作中,使用2英寸和4英寸圆形平面磁控靶在不同靶-衬底距离下通过实验制备了铜薄膜。同时,通过集成多尺度模拟研究了铜薄膜的溅射沉积过程,其中使用蒙特卡罗(MC)方法对磁控溅射放电进行建模,并使用耦合蒙特卡罗(MC)和分子动力学(MD)方法模拟溅射粒子的传输。实验结果表明,随着靶-衬底距离从30毫米增加到120毫米,2英寸靶溅射的膜厚分布从钟形曲线变为线形曲线,而4英寸靶溅射的膜厚分布则从鞍形曲线变为线形曲线。模拟结果与实验结果一致。模拟结果表明,在靶-衬底距离为30毫米时,来自2英寸靶的溅射粒子流在衬底中心附近强烈重叠,导致膜厚分布呈钟形,而4英寸靶上侵蚀槽直径的增加降低了衬底中心附近溅射粒子流的叠加效应,从而导致膜厚分布呈鞍形。此外,当靶-衬底距离在30至120毫米范围内时,4英寸靶溅射的膜厚均匀性优于2英寸靶溅射,并对其潜在机制进行了详细讨论。

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