Mahata Chandreswar, So Hyojin, Kim Soomin, Kim Sungjun, Cho Seongjae
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.
Materials (Basel). 2023 Dec 5;16(24):7510. doi: 10.3390/ma16247510.
This study focuses on InGaZnO-based synaptic devices fabricated using reactive radiofrequency sputtering deposition with highly uniform and reliable multilevel memory states. Electron trapping and trap generation behaviors were examined based on current compliance adjustments and constant voltage stressing on the ITO/InGaZnO/ITO memristor. Using O + N plasma treatment resulted in stable and consistent cycle-to-cycle memory switching with an average memory window of ~95.3. Multilevel resistance states ranging from 0.68 to 140.7 kΩ were achieved by controlling the V within the range of -1.4 to -1.8 V. The modulation of synaptic weight for short-term plasticity was simulated by applying voltage pulses with increasing amplitudes after the formation of a weak conductive filament. To emulate several synaptic behaviors in InGaZnO-based memristors, variations in the pulse interval were used for paired-pulse facilitation and pulse frequency-dependent spike rate-dependent plasticity. Long-term potentiation and depression are also observed after strong conductive filaments form at higher current compliance in the switching layer. Hence, the ITO/InGaZnO/ITO memristor holds promise for high-performance synaptic device applications.
本研究聚焦于采用反应射频溅射沉积制备的基于铟镓锌氧化物（InGaZnO）的突触器件，其具有高度均匀且可靠的多级存储状态。基于电流依从性调整以及对氧化铟锡（ITO）/铟镓锌氧化物/氧化铟锡忆阻器施加恒压应力，研究了电子俘获和陷阱产生行为。使用氧离子和氮等离子体处理实现了稳定且一致的逐周期存储切换，平均存储窗口约为95.3。通过将电压控制在 -1.4至 -1.8 V范围内，实现了0.68至140.7 kΩ的多级电阻状态。在形成弱导电细丝后，通过施加幅度递增的电压脉冲模拟了短期可塑性的突触权重调制。为了模拟基于铟镓锌氧化物忆阻器中的几种突触行为，脉冲间隔的变化用于双脉冲易化和脉冲频率依赖的放电率依赖可塑性。在开关层中以较高电流依从性形成强导电细丝后，也观察到了长时程增强和抑制。因此，ITO/铟镓锌氧化物/ITO忆阻器在高性能突触器件应用方面具有潜力。
