Mahata Chandreswar, So Hyojin, Yang Seyeong, Ismail Muhammad, Kim Sungjun, Cho Seongjae
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea.
J Chem Phys. 2023 Nov 14;159(18). doi: 10.1063/5.0179314.
Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage-stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and potentiation-depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration.
在氧化铟锡/铟镓锌氧化物/氧化铟锡电阻开关器件中研究了双极渐变电阻开关。开关层内部可控的本征氧空位形成使得能够建立稳定的多电平存储状态，实现复位电压控制和不可降解的数据耐久性。氧化铟锡/铟镓锌氧化物界面控制着开关层内氧离子的迁移和氧化还原反应。在导电细丝电形成之前观察到电压应力诱导的电子俘获和氧空位形成。该器件模拟了生物突触，通过电脉冲序列展示了短期和长期的增强和抑制。在基于铟镓锌氧化物的人工突触中成功模拟了突触后电流的调制和脉冲频率依赖性短期增强。氧化铟锡/铟镓锌氧化物/氧化铟锡忆阻器表现出脉冲幅度依赖性可塑性、脉冲率依赖性可塑性以及低能耗的增强-抑制突触学习，使其成为大规模集成的有前途的候选者。
