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在先进的硅光子学平台上进行微转移印刷磷化铟C波段半导体光放大器,用于无损马赫曾德尔干涉仪交换结构和高速集成发射机。

Micro-transfer printing InP C-band SOAs on advanced silicon photonics platform for lossless MZI switch fabrics and high-speed integrated transmitters.

作者信息

Zhang Jing, Bogaert Laurens, Krückel Clemens, Soltanian Emadreza, Deng Hong, Haq Bahawal, Rimböck Johanna, Van Kerrebrouck Joris, Lepage Guy, Verheyen Peter, Van Campenhout Joris, Ossieur Peter, Van Thourhout Dries, Morthier Geert, Bogaerts Wim, Roelkens Gunther

出版信息

Opt Express. 2023 Dec 18;31(26):42807-42821. doi: 10.1364/OE.505112.

DOI:10.1364/OE.505112
PMID:38178391
Abstract

We present an approach for the heterogeneous integration of InP semiconductor optical amplifiers (SOAs) and lasers on an advanced silicon photonics (SiPh) platform by using micro-transfer-printing (µTP). After the introduction of the µTP concept, the focus of this paper shifts to the demonstration of two C-band III-V/Si photonic integrated circuits (PICs) that are important in data-communication networks: an optical switch and a high-speed optical transmitter. First, a C-band lossless and high-speed Si Mach-Zehnder interferometer (MZI) switch is demonstrated by co-integrating a set of InP SOAs with the Si MZI switch. The micro-transfer-printed SOAs provide 10 dB small-signal gain around 1560 nm with a 3 dB bandwidth of 30 nm. Secondly, an integrated transmitter combining an on-chip widely tunable laser and a doped-Si Mach-Zehnder modulator (MZM) is demonstrated. The laser has a continuous tuning range over 40 nm and the transmitter is capable of 40 Gbps non-return-to-zero (NRZ) back-to-back transmission at wavelengths ranging from 1539 to 1573 nm. These demonstrations pave the way for the realization of complex and fully integrated photonic systems-on-chip with integrated III-V-on-Si components, and this technique is transferable to other material films and devices that can be released from their native substrate.

摘要

我们展示了一种通过使用微转移印刷(µTP)在先进的硅光子学(SiPh)平台上对磷化铟半导体光放大器(SOA)和激光器进行异质集成的方法。在介绍了µTP概念之后,本文的重点转向演示在数据通信网络中重要的两个C波段III-V族/硅光子集成电路(PIC):一个光开关和一个高速光发射器。首先,通过将一组磷化铟SOA与硅马赫曾德尔干涉仪(MZI)开关共同集成,演示了一个C波段无损高速硅马赫曾德尔干涉仪(MZI)开关。微转移印刷的SOA在1560nm左右提供10dB的小信号增益,3dB带宽为30nm。其次,演示了一种集成发射器,它结合了片上宽调谐激光器和掺杂硅马赫曾德尔调制器(MZM)。该激光器具有超过40nm的连续调谐范围,并且该发射器能够在1539至1573nm的波长范围内进行40Gbps非归零(NRZ)背对背传输。这些演示为实现具有集成III-V族/硅组件的复杂且完全集成的片上光子系统铺平了道路,并且该技术可转移到其他可以从其原生衬底上释放的材料薄膜和器件上。

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