NanoLund, Lund University, 22100, Lund, Sweden.
Solid State Physics, Lund University, Box 118, 22100, Lund, Sweden.
Nat Commun. 2019 Oct 8;10(1):4577. doi: 10.1038/s41467-019-12437-6.
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux.
半导体纳米线为将新颖结构和功能整合到电子和光电设备中提供了机会。为了实现具有理想性能的结构的良好控制生长，对纳米线生长机制的清晰理解是至关重要的，但目前的理解受到在生长过程中缺乏对重要参数（例如催化剂颗粒组成）的经验测量的限制。然而，通过对生长后的研究，这很难准确确定。我们首次报告了在纳米线生长过程中直接原位测量催化剂组成的情况。我们在电子显微镜中研究了 Au 种子 GaAs 纳米线的生长情况，并使用 X 射线能量色散光谱法测量了催化剂的组成。在生长过程中，催化剂中的 Ga 含量随温度和 Ga 前体通量的增加而增加。
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