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氮化铟镓孤立单层岛的单光子发射。

Single-photon emission from isolated monolayer islands of InGaN.

作者信息

Sun Xiaoxiao, Wang Ping, Wang Tao, Chen Ling, Chen Zhaoying, Gao Kang, Aoki Tomoyuki, Li Mo, Zhang Jian, Schulz Tobias, Albrecht Martin, Ge Weikun, Arakawa Yasuhiko, Shen Bo, Holmes Mark, Wang Xinqiang

机构信息

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, 100871 Beijing, China.

Collaborative Innovation Center of Quantum Matter, 100871 Beijing, China.

出版信息

Light Sci Appl. 2020 Sep 9;9:159. doi: 10.1038/s41377-020-00393-6. eCollection 2020.

Abstract

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.

摘要

我们识别并表征了一种新型量子发射器,它由通过分子束外延生长的InGaN单层岛形成,并通过制造纳米柱结构阵列进一步分离。对单层岛的特征发射光谱进行了详细的光学分析,结果表明主要发射体是一个明亮、稳定且快速的单光子发射器,波长约为400纳米。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/c2ca894b248f/41377_2020_393_Fig1_HTML.jpg

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