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氮化铟镓孤立单层岛的单光子发射。

Single-photon emission from isolated monolayer islands of InGaN.

作者信息

Sun Xiaoxiao, Wang Ping, Wang Tao, Chen Ling, Chen Zhaoying, Gao Kang, Aoki Tomoyuki, Li Mo, Zhang Jian, Schulz Tobias, Albrecht Martin, Ge Weikun, Arakawa Yasuhiko, Shen Bo, Holmes Mark, Wang Xinqiang

机构信息

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, 100871 Beijing, China.

Collaborative Innovation Center of Quantum Matter, 100871 Beijing, China.

出版信息

Light Sci Appl. 2020 Sep 9;9:159. doi: 10.1038/s41377-020-00393-6. eCollection 2020.

DOI:10.1038/s41377-020-00393-6
PMID:32963771
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7481781/
Abstract

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.

摘要

我们识别并表征了一种新型量子发射器,它由通过分子束外延生长的InGaN单层岛形成,并通过制造纳米柱结构阵列进一步分离。对单层岛的特征发射光谱进行了详细的光学分析,结果表明主要发射体是一个明亮、稳定且快速的单光子发射器,波长约为400纳米。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/d01f63cbfe25/41377_2020_393_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/c2ca894b248f/41377_2020_393_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/9a86ffab28ea/41377_2020_393_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/20ddd1123b2f/41377_2020_393_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/d01f63cbfe25/41377_2020_393_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/c2ca894b248f/41377_2020_393_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/9a86ffab28ea/41377_2020_393_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/20ddd1123b2f/41377_2020_393_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3121/7481781/d01f63cbfe25/41377_2020_393_Fig4_HTML.jpg

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本文引用的文献

1
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2
Room temperature solid-state quantum emitters in the telecom range.电信波段的室温固态量子发射器。
Sci Adv. 2018 Mar 30;4(3):eaar3580. doi: 10.1126/sciadv.aar3580. eCollection 2018 Mar.
3
Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride.六方氮化硼中原子缺陷的可调谐且高纯度室温单光子发射
Adv Sci (Weinh). 2021 Sep;8(18):e2100100. doi: 10.1002/advs.202100100. Epub 2021 Jul 26.
Nat Commun. 2017 Sep 26;8(1):705. doi: 10.1038/s41467-017-00810-2.
4
Electrically driven single-photon emission from an isolated single molecule.电驱动的孤立单分子单光子发射。
Nat Commun. 2017 Sep 18;8(1):580. doi: 10.1038/s41467-017-00681-7.
5
Ultraclean Single Photon Emission from a GaN Quantum Dot.GaN 量子点的超高纯度单光子发射。
Nano Lett. 2017 May 10;17(5):2902-2907. doi: 10.1021/acs.nanolett.7b00109. Epub 2017 Apr 26.
6
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.氮化镓中缺陷的亮室温单光子发射。
Adv Mater. 2017 Mar;29(12). doi: 10.1002/adma.201605092. Epub 2017 Feb 9.
7
An integrated diamond nanophotonics platform for quantum-optical networks.一种用于量子光学网络的集成金刚石纳米光子学平台。
Science. 2016 Nov 18;354(6314):847-850. doi: 10.1126/science.aah6875. Epub 2016 Oct 13.
8
Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride.六方氮化硼中缺陷的稳健多色单光子发射。
ACS Nano. 2016 Aug 23;10(8):7331-8. doi: 10.1021/acsnano.6b03602. Epub 2016 Jul 18.
9
Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2.在原子层厚的 WSe2 中对单光子发射器进行纳米级定位。
Adv Mater. 2016 Sep;28(33):7101-5. doi: 10.1002/adma.201600560. Epub 2016 Jun 15.
10
Quantum emission from hexagonal boron nitride monolayers.六方氮化硼单层中的量子发射。
Nat Nanotechnol. 2016 Jan;11(1):37-41. doi: 10.1038/nnano.2015.242. Epub 2015 Oct 26.