Erbas Berke, Conde-Rubio Ana, Liu Xia, Pernollet Joffrey, Wang Zhenyu, Bertsch Arnaud, Penedo Marcos, Fantner Georg, Banerjee Mitali, Kis Andras, Boero Giovanni, Brugger Juergen
Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015 Switzerland.
Present Address: Institute of Materials Science of Barcelona ICMAB-CSIC, Campus UAB, Bellaterra, 08193 Spain.
Microsyst Nanoeng. 2024 Feb 23;10:28. doi: 10.1038/s41378-024-00655-y. eCollection 2024.
Grayscale structured surfaces with nanometer-scale features are used in a growing number of applications in optics and fluidics. Thermal scanning probe lithography achieves a lateral resolution below 10 nm and a vertical resolution below 1 nm, but its maximum depth in polymers is limited. Here, we present an innovative combination of nanowriting in thermal resist and plasma dry etching with substrate cooling, which achieves up to 10-fold amplification of polymer nanopatterns into SiO without proportionally increasing surface roughness. Sinusoidal nanopatterns in SiO with 400 nm pitch and 150 nm depth are fabricated free of shape distortion after dry etching. To exemplify the possible applications of the proposed method, grayscale dielectric nanostructures are used for scalable manufacturing through nanoimprint lithography and for strain nanoengineering of 2D materials. Such a method for aspect ratio amplification and smooth grayscale nanopatterning has the potential to find application in the fabrication of photonic and nanoelectronic devices.
具有纳米级特征的灰度结构化表面在光学和流体学领域的应用越来越多。热扫描探针光刻技术可实现横向分辨率低于10纳米、纵向分辨率低于1纳米,但在聚合物中的最大刻蚀深度有限。在此,我们展示了一种热阻纳米书写与等离子体干法刻蚀相结合并辅以衬底冷却的创新方法,该方法能将聚合物纳米图案在SiO中放大至10倍,且不会按比例增加表面粗糙度。干法刻蚀后,成功制备出了周期为400纳米、深度为150纳米的SiO正弦纳米图案,且无形状畸变。为举例说明该方法的可能应用,灰度介电纳米结构被用于通过纳米压印光刻进行可扩展制造以及对二维材料进行应变纳米工程。这种用于纵横比放大和平滑灰度纳米图案化的方法有潜力在光子和纳米电子器件制造中得到应用。