Park Jeongwon, Kwak Seung Jae, Kang Sumin, Oh Saeyoung, Shin Bongki, Noh Gichang, Kim Tae Soo, Kim Changhwan, Park Hyeonbin, Oh Seung Hoon, Kang Woojin, Hur Namwook, Chai Hyun-Jun, Kang Minsoo, Kwon Seongdae, Lee Jaehyun, Lee Yongjoon, Moon Eoram, Shi Chuqiao, Lou Jun, Lee Won Bo, Kwak Joon Young, Yang Heejun, Chung Taek-Mo, Eom Taeyong, Suh Joonki, Han Yimo, Jeong Hu Young, Kim YongJoo, Kang Kibum
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University (SNU), Seoul, Republic of Korea.
Nat Commun. 2024 Mar 8;15(1):2138. doi: 10.1038/s41467-024-46293-w.
The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS-MoSe lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including AlO, HfO, Ru, Te, and SbSe.
先进的图案化工艺是实现下一代高速、低功耗器件发展的集成技术基础。近年来，区域选择性原子层沉积（AS-ALD）作为一种替代图案化工艺出现，它能够利用沉积阻挡层将目标材料直接沉积在所需区域。然而，将AS-ALD工艺用于提高图案化分辨率和选择性仍具有挑战性。在本研究中，我们报告了一种基于超晶格的AS-ALD（SAS-ALD）工艺，该工艺使用二维（2D）MoS-MoSe横向超晶格作为预定义模板。通过控制化学气相沉积（CVD）前驱体的持续时间，我们在二维超晶格模板上实现了所得AS-ALD的最小半间距尺寸达到亚10纳米尺度。SAS-ALD引入了一种机制，通过ALD前驱体的吸附和扩散过程实现选择性，这与传统的AS-ALD方法明显不同。该技术即使在小图案尺寸上也有助于选择性沉积，并且与使用如三甲基铝等高反应性前驱体兼容。此外，它允许选择性沉积多种材料，包括AlO、HfO、Ru、Te和SbSe。
