Siles Pablo F, Gäbler Daniel
X-FAB Global Services GmbH, 99097 Erfurt, Germany.
Sensors (Basel). 2024 Feb 27;24(5):1535. doi: 10.3390/s24051535.
High-energy radiation is known to potentially impact the optical performance of silicon-based sensors adversely. Nevertheless, a proper characterization and quantification of possible spectral response degradation effects due to UV stress is technically challenging. On one hand, typical illumination methods via UV lamps provide a poorly defined energy spectrum. On the other hand, a standardized measurement methodology is also missing. This work provides an approach where well-defined energy spectrum UV stress conditions are guaranteed via a customized optical set up, including a laser driven light source, a monochromator, and a non-solarizing optical fiber. The test methodology proposed here allows performing a controlled UV stress between 200 nm and 400 nm with well-defined energy conditions and offers a quantitative overview of the impact on the optical performance in CMOS-based photodiodes, along a wavelength range from 200 to 1100 nm and 1 nm step. This is of great importance for the characterization and development of new sensors with a high and stable UV spectral response, as well as for implementation of practical applications such as UV light sensing and UV-based sterilization.
众所周知，高能辐射可能会对硅基传感器的光学性能产生不利影响。然而，对紫外线（UV）应力导致的可能的光谱响应退化效应进行适当的表征和量化在技术上具有挑战性。一方面，通过紫外线灯的典型照明方法提供的能谱定义不明确。另一方面，也缺少标准化的测量方法。这项工作提供了一种方法，通过定制的光学装置保证明确的能谱紫外线应力条件，该装置包括激光驱动光源、单色仪和非偏振光纤。这里提出的测试方法允许在200纳米至400纳米之间以明确的能量条件进行可控的紫外线应力测试，并提供在基于CMOS的光电二极管中，沿200至1100纳米波长范围且步长为1纳米时对光学性能影响的定量概述。这对于具有高且稳定的紫外线光谱响应的新型传感器的表征和开发，以及对于诸如紫外线光传感和基于紫外线的杀菌等实际应用的实施非常重要。
