Han Jongseong, Son Jaemin, Ryu Seungho, Cho Kyoungah, Kim Sangsig
Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Sci Rep. 2024 Mar 18;14(1):6446. doi: 10.1038/s41598-024-57290-w.
In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters and NAND and NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity of the gate bias voltage and exhibit steep switching characteristics with an extremely low subthreshold swing of 1.08 mV dec and a high ON/OFF current ratio of approximately 10. Logic circuits consisting of NS FBFETs perform binary and ternary logic operations of the inverters and NAND and NOR gates in each circuit and store their outputs under zero-bias conditions. Therefore, NS FBFETs are promising components for next-generation LIM.
在本研究中，我们展示了由具有三栅结构的纳米片（NS）反馈场效应晶体管（FBFET）组成的反相器以及与非门和或非门的二元和三元逻辑存储（LIM）操作。根据栅极偏置电压的极性，NS FBFET可重新配置为p沟道或n沟道模式，并表现出陡峭的开关特性，亚阈值摆幅极低，为1.08 mV/dec，开/关电流比约为10。由NS FBFET组成的逻辑电路在每个电路中执行反相器以及与非门和或非门的二元和三元逻辑操作，并在零偏置条件下存储其输出。因此，NS FBFET是下一代LIM的有前途的组件。
