Scherrer Markus, Lee Chang-Won, Schmid Heinz, Moselund Kirsten E
Science of Quantum and Information Technology, IBM Research Europe-Zurich, 8803 Rüschlikon, Switzerland.
Institute of Advanced Optics and Photonics, Hanbat National University, 34158 Daejeon, South Korea.
ACS Photonics. 2024 Feb 12;11(3):1006-1011. doi: 10.1021/acsphotonics.3c01372. eCollection 2024 Mar 20.
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.
光子集成电路正在为新型片上功能铺平道路，这些功能在通信、计算及其他领域有着广泛应用。片上光源的集成，尤其是单模激光器，对于充分发挥这些光子芯片的潜力至关重要。最近，涉及拓扑设计的新颖概念为调节器件特性（如所需的单模发射）引入了多种选择。在此，我们介绍一种新颖的腔设计，通过在拓扑晶格内确定性地放置增益材料来实现拓扑界面模式的放大。所提出的设计通过选择性外延工艺在实验上得以实现，以获得嵌入同一层内紧密间隔的硅和铟镓砷纳米棒。这首次展示了在电信频段使用放大拓扑模式概念且不引入人为损耗的单模激光器。
