Hur Jae Seok, Lee Sungsoo, Moon Jiwon, Jung Hang-Gyo, Jeon Jongwook, Yoon Seong Hun, Park Jin-Hong, Jeong Jae Kyeong
Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nanoscale Horiz. 2024 May 29;9(6):934-945. doi: 10.1039/d4nh00057a.
As the downscaling of conventional dynamic random-access memory (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However, incorporating silicon into 3D DRAM technology faces various challenges in securing cost-effective high cell transistor performance. Therefore, many researchers are exploring the application of next-generation semiconductor materials, such as transition oxide semiconductors (OSs) and metal dichalcogenides (TMDs), to address these challenges and to realize 3D DRAM. This study provides an overview of the proposed structures for 3D DRAM, compares the characteristics of OSs and TMDs, and discusses the feasibility of employing the OSs and TMDs as the channel material for 3D DRAM. Furthermore, we review recent progress in 3D DRAM using the OSs, discussing their potential to overcome challenges in silicon-based approaches.
随着传统动态随机存取存储器（DRAM）的缩小已达到极限，三维DRAM已被提出作为下一代DRAM单元架构。然而，将硅纳入三维DRAM技术在确保具有成本效益的高单元晶体管性能方面面临各种挑战。因此，许多研究人员正在探索下一代半导体材料的应用，如过渡氧化物半导体（OSs）和金属二硫属化物（TMDs），以应对这些挑战并实现三维DRAM。本研究概述了三维DRAM的提议结构，比较了OSs和TMDs的特性，并讨论了将OSs和TMDs用作三维DRAM沟道材料的可行性。此外，我们回顾了使用OSs的三维DRAM的最新进展，讨论了它们克服基于硅的方法中挑战的潜力。
