Burakowski Marek, Holewa Paweł, Mrowiński Paweł, Sakanas Aurimas, Musiał Anna, Sȩk Grzegorz, Yvind Kresten, Semenova Elizaveta, Syperek Marcin
Opt Express. 2024 Mar 25;32(7):10874-10886. doi: 10.1364/OE.515223.
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80 single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1.
在小尺寸、高度集成的硅基光子芯片中利用光子进行量子信息处理需要引入非经典光源。在这方面，自组装III-V族半导体量子点（QD）是一个有吸引力的解决方案，然而，它们必须与硅平台相结合。在这里，通过利用大面积直接键合技术，我们展示了InP和SOI芯片的杂交，这允许将单光子耦合到SOI芯片内部，为量子光子芯片建立多源环境提供了具有成本效益的可扩展性。我们制造了由嵌入在位于SOI定义的Si波导上方的锥形InP波导（WG）中的自组装InAs量子点组成的器件。聚焦于在与低损耗光纤网络兼容的电信C波段产生光的器件，我们通过观察在80 µm长的Si波导末端制造的InP制成的圆形布拉格光栅外耦合器处以及Si波导的切割边缘处外耦合的光子，展示了InP和SOI平台之间的光耦合。最后，对于一个具有抑制多光子产生事件且单光子产生纯度为80的器件，我们测量了在Si波导切割面处外耦合的光子数。我们估计源与Si波导之间的片上定向光子耦合为5.1。
