Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland , College Park, Maryland 20742, United States.
Department of Physics, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea.
Nano Lett. 2017 Dec 13;17(12):7394-7400. doi: 10.1021/acs.nanolett.7b03220. Epub 2017 Nov 17.
Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
可扩展的量子光子系统需要将高效的单光子源与集成光子器件相耦合。固态量子发射器可以高效率地产生单光子,而硅光子电路可以在集成器件结构中对其进行操纵。因此,将这两种材料平台结合起来,可以显著增加集成量子光子器件的复杂性。在这里,我们演示了将固态量子发射器与硅光子器件进行混合集成。我们开发了一种拾放技术,可以以纳米级精度将在电信波长下发射的外延生长的 InAs/InP 量子点确定性地定位在硅光子芯片上。我们采用了绝热渐缩方法,以高效率将发射从量子点转移到波导。我们还在芯片上集成了一个硅光子分束器,以执行汉伯里-布朗和特威斯测量。我们的方法可以将经过预特性化的 III-V 量子光子器件集成到大规模光子结构中,从而实现由多个发射器和光子组成的复杂器件。