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不同温度退火下In/Te双层异质结构的光电性能调控：用于光子和太阳能电池应用的表面润湿性和光响应研究

Tuning in optoelectronic properties of In/Te bilayer heterostructure upon annealing at different temperatures: surface wettability and photo response study for photonic and solar cell applications.

作者信息

Priyadarshini P, Kumar Prabhukrupa C, Naik Ramakanta

机构信息

Department of Engineering and Materials Physics, ICT-IOC Bhubaneswar 751013 India

出版信息

RSC Adv. 2024 Apr 22;14(18):12897-12910. doi: 10.1039/d4ra00807c. eCollection 2024 Apr 16.

DOI:10.1039/d4ra00807c
PMID:38650689
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11033610/
Abstract

The current study depicted the influence of annealing temperature on In/Te bilayer thin film of 350 nm synthesized by thermal evaporation method. The interfacial diffusion of In into Te sites at different annealing temperatures (100 °C, 150 °C, 200 °C, 250 °C) modified the structural as well as the electro-optical response of the films. The structural study showed the appearance of an orthorhombic InTe peak with annealing. The surface texture showed the particle nature with homogeneous distribution with annealing temperatures. The cross-sectional view of the bilayer and annealed film confirmed the formation of In/Te film with a total thickness of 350 nm. Surface mapping images confirm the homogeneous and uniform elemental distribution. The transmission was enhanced with annealing and showed broad transparency over the NIR region, making them suitable for IR device applications. The enhanced optical bandgap with annealing due to induced local structural changes reduced the optical parameters, such as refractive index, dielectric constant, and nonlinear susceptibility. The surface wettability measurements showed an enhanced hydrophobic nature with annealing. The variation of photocurrent with respect to voltage showed an ohmic nature, with enhancement from nA to ∼mA with annealing. Such alteration opened new ways to be used in solar cells, photodetectors, and photonic device applications.

摘要

当前的研究描述了退火温度对通过热蒸发法合成的350 nm铟/碲双层薄膜的影响。在不同退火温度（100°C、150°C、200°C、250°C）下铟向碲位点的界面扩散改变了薄膜的结构以及电光响应。结构研究表明，退火后出现了正交相铟碲峰。表面纹理显示出颗粒性质，且随着退火温度的升高分布均匀。双层膜和退火膜的横截面视图证实了总厚度为350 nm的铟/碲膜的形成。表面映射图像证实了元素分布的均匀性。随着退火，透射率增强，并且在近红外区域显示出宽透明度，使其适用于红外器件应用。由于诱导的局部结构变化，退火后光学带隙增大，降低了诸如折射率、介电常数和非线性磁化率等光学参数。表面润湿性测量表明，随着退火，疏水性增强。光电流随电压的变化呈现欧姆特性，随着退火从纳安增强到约毫安。这种变化为太阳能电池、光电探测器和光子器件应用开辟了新的途径。

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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/2e7c96ad5f3c/d4ra00807c-s1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/c0cbedc95a58/d4ra00807c-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/b12237672e18/d4ra00807c-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/9328ef765233/d4ra00807c-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/8178220a67d5/d4ra00807c-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/391e/11033610/a82ff344f4ba/d4ra00807c-f8.jpg
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