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用于神经形态计算和灵活应用的铁电人工突触。

Ferroelectric artificial synapse for neuromorphic computing and flexible applications.

作者信息

Li Qing-Xuan, Liu Yi-Lun, Cao Yuan-Yuan, Wang Tian-Yu, Zhu Hao, Ji Li, Liu Wen-Jun, Sun Qing-Qing, Zhang David Wei, Chen Lin

机构信息

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.

National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China.

出版信息

Fundam Res. 2022 Mar 1;3(6):960-966. doi: 10.1016/j.fmre.2022.02.004. eCollection 2023 Nov.

DOI:10.1016/j.fmre.2022.02.004
PMID:38933007
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11197568/
Abstract

Research of artificial synapses is increasing in popularity with the development of bioelectronics and the appearance of wearable devices. Because the high-temperature treatment process of inorganic materials is not compatible with flexible substrates, organic ferroelectric materials that are easier to process have emerged as alternatives. An organic synaptic device based on P(VDF-TrFE) was prepared in this study. The device showed reliable P/E endurance over 10 cycles and a data storage retention capability at 80 °C over 10 s. Simultaneously, it possessed excellent synaptic functions, including short-term/ long-term synaptic plasticity and spike-timing-dependent plasticity. In addition, the ferroelectric performance of the device remained stable even under bending (7 mm bending radius) or after 500 bending cycles. This work shows that low-temperature processed organic ferroelectric materials can provide new ideas for the future development of wearable electronics and flexible artificial synapses.

摘要

随着生物电子学的发展和可穿戴设备的出现,人工突触的研究越来越受到关注。由于无机材料的高温处理过程与柔性基板不兼容,因此更易于加工的有机铁电材料应运而生。本研究制备了一种基于P(VDF-TrFE)的有机突触器件。该器件在10个循环中表现出可靠的极化反转耐久性,在80°C下具有超过10秒的数据存储保持能力。同时,它还具有优异的突触功能,包括短期/长期突触可塑性和尖峰时间依赖性可塑性。此外,即使在弯曲(7mm弯曲半径)或500次弯曲循环后,该器件的铁电性能仍保持稳定。这项工作表明,低温处理的有机铁电材料可为可穿戴电子设备和柔性人工突触的未来发展提供新的思路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/bc596f61a197/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/8141c5e37673/ga1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/359879adbde5/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/7078ddaa1960/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/c1fcc13616a5/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/bc596f61a197/gr5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/8141c5e37673/ga1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/359879adbde5/gr1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/7078ddaa1960/gr3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/c1fcc13616a5/gr4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2da4/11197568/bc596f61a197/gr5.jpg

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