Jiang Yilin, Su Bin, Yu Jincheng, Han Zhanran, Hu Haihua, Zhuang Hua-Lu, Li Hezhang, Dong Jinfeng, Li Jing-Wei, Wang Chao, Ge Zhen-Hua, Feng Jing, Sun Fu-Hua, Li Jing-Feng
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Department of Precision Instrument, Tsinghua University, Beijing, 100084, China.
Nat Commun. 2024 Jul 14;15(1):5915. doi: 10.1038/s41467-024-50175-6.
GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 WmK at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcmK at 300 K). Consequently, we obtain a maximum figure of merit Z of 4.0 × 10K at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.
锗碲是一种很有前景的p型材料,近年来其热电性能不断增强,显示出其在中温应用方面的优越性。在这项工作中,通过一种简便的复合方法提高了锗碲的热电性能。我们发现,在铋掺杂的锗碲中掺入少量硼颗粒会导致功率因子显著提高,同时热导率降低,从而实现了对电输运和热输运性质的协同调控。硼颗粒与基体之间的热失配会诱导高密度位错,有效地散射中频声子,这使得在613K时晶格热导率最低可达0.43W/(m·K)。此外,硼/锗碲界面的存在改变了界面势垒,导致塞贝克系数增加,进而提高了功率因子(在300K时为25.4μW/(cm²·K²))。因此,我们在基于锗碲的复合材料中于613K时获得了最高优值Z为4.0×10⁻³K⁻¹,这是基于锗碲的热电材料中的最高纪录值,并且也优于大多数中温应用的热电系统。这项工作为进一步提高基于锗碲的热电材料的性能提供了一种有效方法。