Yang Qishuo, Wang Yun-Peng, Shi Xiao-Lei, Li XingXing, Zhao Erding, Chen Zhi-Gang, Zou Jin, Leng Kai, Cai Yongqing, Zhu Liang, Pantelides Sokrates T, Lin Junhao
Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, People's Republic of China.
Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, People's Republic of China.
Nat Commun. 2024 Jul 18;15(1):6074. doi: 10.1038/s41467-024-50525-4.
One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented MoTe NWs in 2D molybdenum ditelluride (MoTe) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of MoTe NWs from MoTe occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.
一维金属过渡金属硫族化物纳米线（TMC-NWs）有望用于连接基于二维（2D）过渡金属二硫族化物构建的器件，但迄今为止仅证明了其各向同性生长。在此，我们展示了在外部刺激下，使用石墨作为受限封装层，在二维碲化钼（MoTe₂）中直接图案化高度取向的MoTe纳米线。通过在扫描透射电子显微镜中对制造的异质结构进行原位电偏置来研究原子结构转变。原子分辨率的高角度环形暗场扫描透射电子显微镜图像显示，MoTe纳米线从MoTe₂的转变仅沿特定方向发生。结合第一性原理计算，我们将这种取向生长归因于石墨-MoTe₂异质结构界面附近电偏置引起的局部焦耳热以及石墨产生的限制效应。使用相同的策略，我们在2H-MoTe场效应晶体管中制造了作为横向接触电极的、被限制在石墨中的取向纳米线，在金属-纳米线界面处实现了11.5 meV的低肖特基势垒和43.7 Ω·µm的低接触电阻。我们的工作介绍了通过直接金属相图案化来制造用于柔性二维纳米电子学互连的取向纳米线的可能方法。
