Yasuoka Tatsuya, Liu Li, Dang Giang T, Kawaharamura Toshiyuki
School of Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami 782-8502, Kochi, Japan.
Center for Nanotechnology, Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada, Kami 782-8502, Kochi, Japan.
Nanomaterials (Basel). 2024 Jul 18;14(14):1221. doi: 10.3390/nano14141221.
α-GaO films were grown on a -plane sapphire substrate by HCl-supported mist chemical vapor deposition with multiple solution chambers, and the effect of HCl support on α-GaO film quality was investigated. The growth rate monotonically increased with increasing Ga supply rate. However, as the Ga supply rate was higher than 0.1 mmol/min, the growth rate further increased with increasing HCl supply rate. The surface roughness was improved by HCl support when the Ga supply rate was smaller than 0.07 mmol/min. The crystallinity of the α-GaO films exhibited an improvement with an increase in the film thickness, regardless of the solution preparation conditions, Ga supply rate, and HCl supply rate. These results indicate that there is a low correlation between the improvement of surface roughness and crystallinity in the α-GaO films grown under the conditions described in this paper.
通过具有多个溶液腔室的HCl辅助雾状化学气相沉积法在α-平面蓝宝石衬底上生长α-GaO薄膜，并研究了HCl辅助对α-GaO薄膜质量的影响。生长速率随Ga供应速率的增加而单调增加。然而，当Ga供应速率高于0.1 mmol/min时，生长速率随HCl供应速率的增加而进一步增加。当Ga供应速率小于0.07 mmol/min时，HCl辅助改善了表面粗糙度。无论溶液制备条件、Ga供应速率和HCl供应速率如何，α-GaO薄膜的结晶度都随着薄膜厚度的增加而提高。这些结果表明，在本文所述条件下生长的α-GaO薄膜中，表面粗糙度的改善与结晶度之间的相关性较低。
