Spaggiari Giulia, Fornari Roberto, Mazzolini Piero, Mezzadri Francesco, Parisini Antonella, Bosi Matteo, Seravalli Luca, Pattini Francesco, Pavesi Maura, Baraldi Andrea, Rampino Stefano, Sacchi Anna, Bersani Danilo
Department of Mathematical, Physical and Computer Sciences, University of Parma, Parma, Italy.
Institute of Materials for Electronics and Magnetism (IMEM), National Research Council (CNR), Parma, Italy.
Appl Spectrosc. 2024 Dec;78(12):1307-1315. doi: 10.1177/00037028241267925. Epub 2024 Aug 2.
Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (GaO) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in GaO thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for GaO characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal-organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on GaO polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for GaO thin film characterization, especially concerning phase detection and crystalline quality.
拉曼光谱是一种通用的无损技术，被用于开发一种氧化镓（GaO）相检测和鉴定的方法。该方法将实验结果与全面的文献调研相结合。所建立的拉曼方法为无损评估GaO薄膜的相纯度和检测次生相提供了一个强大的工具。使用X射线衍射进行比较，突出了这些技术可为GaO表征提供的互补信息。纳入了一些案例研究以证明所提出的光谱方法的实用性，即金属有机气相外延和脉冲电子沉积（PED）等沉积条件以及生长过程中提供的外在元素（PED情况下的Sn）对GaO多晶型的影响。总之，结果表明拉曼光谱为GaO薄膜表征提供了一种快速、可靠且无损的高分辨率方法，特别是在相检测和晶体质量方面。
