Cobarrubia Antonio, Schottle Nicholas, Suliman Dilon, Gomez-Barron Sebastian, Patino Christopher R, Kiefer Boris, Behura Sanjay K
Department of Physics, San Diego State University, San Diego, California 92182, United States.
Computational Science Research Center, San Diego State University, San Diego, California 92182, United States.
ACS Nano. 2024 Aug 27;18(34):22609-22619. doi: 10.1021/acsnano.4c04240. Epub 2024 Aug 13.
The quest for qubit operation at room temperature is accelerating the field of quantum information science and technology. Solid state quantum defects with spin-optical properties are promising spin- and photonic qubit candidates for room temperature operations. In this regard, a single boron vacancy within hexagonal boron nitride (h-BN) lattice such as defect has coherent quantum interfaces for spin and photonic qubits owing to the large band gap of h-BN (6 eV) that can shield a computational subspace from environmental noise. However, for a defect in h-BN to be a potential quantum simulator, the design and characterization of the Hamiltonian involving mutual interactions of the defect and other degrees of freedom are needed to fully understand the effect of defects on the computational subspace. Here, we studied the key coupling tensors such as zero-field splitting, Zeeman effect, and hyperfine splitting in order to build the Hamiltonian of the defect. These eigenstates are spin triplet states that form a computational subspace. To study the phonon-assisted single photon emission in the defect, the Hamiltonian is characterized by electron-phonon interaction with Jahn-Teller distortions. A theoretical demonstration of how the Hamiltonian is utilized to relate these quantum properties to spin- and photonic-quantum information processing. For selecting promising host 2D materials for spin and photonic qubits, we present a data-mining perspective based on the proposed Hamiltonian engineering of the defect in which h-BN is one of four materials chosen to be room temperature qubit candidates.
对室温下量子比特操作的探索正在加速量子信息科学与技术领域的发展。具有自旋光学特性的固态量子缺陷是室温操作中很有前景的自旋和光子量子比特候选者。在这方面,六方氮化硼(h-BN)晶格中的单个硼空位等缺陷由于h-BN的大带隙(6 eV)能够将计算子空间与环境噪声屏蔽开,因而具有自旋和光子量子比特的相干量子界面。然而,要使h-BN中的缺陷成为潜在的量子模拟器,需要设计和表征涉及缺陷与其他自由度相互作用的哈密顿量,以便充分理解缺陷对计算子空间的影响。在此,我们研究了诸如零场分裂、塞曼效应和超精细分裂等关键耦合张量,以构建缺陷的哈密顿量。这些本征态是形成计算子空间的自旋三重态。为了研究缺陷中的声子辅助单光子发射,哈密顿量由具有 Jahn-Teller 畸变的电子 - 声子相互作用来表征。本文进行了理论论证,展示了如何利用哈密顿量将这些量子特性与自旋和光子量子信息处理联系起来。为了选择有前景的用于自旋和光子量子比特的主体二维材料,我们基于所提出的缺陷哈密顿量工程提出了一种数据挖掘观点,其中h-BN是被选为室温量子比特候选者的四种材料之一。