Yi Dongyang, Yao Yao, Wang Yi, Chen Lei
Department of Mechanical and Industrial Engineering, University of Massachusetts Lowell, Lowell, MA 01854.
Department of Industrial and Systems Engineering, University of Missouri, Columbia, MO 65211.
J Manuf Process. 2024 Sep 30;126:185-207. doi: 10.1016/j.jmapro.2024.07.100. Epub 2024 Jul 31.
Invasive Microelectrode Arrays (MEAs) have been a significant and useful tool for us to gain a fundamental understanding of how the brain works through high spatiotemporal resolution neuron-level recordings and/or stimulations. Through decades of research, various types of microwire, silicon, and flexible substrate-based MEAs have been developed using the evolving new materials, novel design concepts, and cutting-edge advanced manufacturing capabilities. Surgical implantation of the latest minimal damaging flexible MEAs through the hard-to-penetrate brain membranes introduces new challenges and thus the development of implantation strategies and instruments for the latest MEAs. In this paper, studies on the design considerations and enabling manufacturing processes of various invasive MEAs as in vivo brain-machine interfaces have been reviewed to facilitate the development as well as the state-of-art of such brain-machine interfaces from an engineering perspective. The challenges and solution strategies developed for surgically implanting such interfaces into the brain have also been evaluated and summarized. Finally, the research gaps have been identified in the design, manufacturing, and implantation perspectives, and future research prospects in invasive MEA development have been proposed.
侵入式微电极阵列(MEAs)一直是我们通过高时空分辨率的神经元水平记录和/或刺激来深入了解大脑工作方式的重要且有用的工具。经过数十年的研究,利用不断发展的新材料、新颖的设计理念和前沿的先进制造能力,已开发出各种类型的基于微丝、硅和柔性基板的微电极阵列。通过难以穿透的脑膜手术植入最新的微创柔性微电极阵列带来了新的挑战,因此需要开发针对最新微电极阵列的植入策略和器械。本文综述了作为体内脑机接口的各种侵入式微电极阵列的设计考量和制造工艺,以便从工程角度推动此类脑机接口的发展以及提升其技术水平。还评估和总结了为将此类接口手术植入大脑所开发的挑战和解决策略。最后,从设计、制造和植入角度确定了研究差距,并提出了侵入式微电极阵列开发的未来研究前景。