Abiedh Khouloud, Salerno Marco, Hassen Fredj, Zaaboub Zouhour
Micro-Optoelectronics and Nanostructures Laboratory (LR99/ES29), Faculty of Sciences, University of Monastir, Monastir 5000, Tunisia.
Department of Physics, Institute for Globally Distributed Open Research and Education (IGDORE), University of Genoa, Via Dodecaneso 33, 16146 Genoa, Italy.
Materials (Basel). 2024 Aug 14;17(16):4043. doi: 10.3390/ma17164043.
All-inorganic perovskite materials are promising in optoelectronics, but their morphology is a key parameter for achieving high device efficiency. We prepared CsPbBr perovskite microcrystals with different shapes grown directly on planar substrate by conventional drop casting. We observed the formation of CsPbBr microcubes on bare indium tin oxide (ITO)-coated glass. Interestingly, with the same technique, CsPbBr microrods were obtained on (3-Aminopropyl) triethoxysilane (APTES)-modified ITO-glass, which we ascribe to the modification of formation kinetics. The obtained microcrystals exhibit an orthorhombic structure. A green photoluminescence (PL) emission is revealed from the CsPbBr microrods. Contact angle measurements, Fourier-transform infrared and PL spectroscopies confirmed that APTES linked successfully to the ITO-glass substrate. We propose a qualitative mechanism to explain the anisotropic growth. The microrods exhibited improved PL and a slower PL lifetime compared to the microcubes, likely due to the diminished occurrence of defects. This work demonstrates the importance of the substrate surface to control the growth of perovskite single crystals and to boost the radiative recombination in view of high-performance optoelectronic devices.
全无机钙钛矿材料在光电子学领域颇具前景,但其形态是实现高器件效率的关键参数。我们通过传统的滴铸法制备了直接生长在平面衬底上的不同形状的CsPbBr钙钛矿微晶。我们观察到在裸铟锡氧化物(ITO)涂层玻璃上形成了CsPbBr微立方体。有趣的是,采用相同技术,在(3-氨丙基)三乙氧基硅烷(APTES)修饰的ITO玻璃上获得了CsPbBr微棒,我们将其归因于形成动力学的改变。所获得的微晶呈现正交结构。从CsPbBr微棒中观察到绿色光致发光(PL)发射。接触角测量、傅里叶变换红外光谱和PL光谱证实APTES成功连接到ITO玻璃衬底上。我们提出了一种定性机制来解释各向异性生长。与微立方体相比,微棒表现出改善的PL和较慢的PL寿命衰减,这可能是由于缺陷发生率降低所致。这项工作证明了衬底表面对于控制钙钛矿单晶生长以及鉴于高性能光电器件促进辐射复合的重要性。