Fan Chen, Zhang Haitao, Liu Huipeng, Pan Xiaofei, Yan Su, Chen Hongliang, Guo Wei, Cai Lin, Wei Shuhua
School of Information Science and Technology, North China University of Technology, Beijing 100144, China.
Beijing Huafeng Test & Control Technology Co., Ltd., Beijing 100094, China.
Micromachines (Basel). 2024 Jul 31;15(8):993. doi: 10.3390/mi15080993.
This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance characteristics of GaN devices, and the stability of GaN devices can be analyzed from the perspective of switching characteristics. Based on the theory of dynamic changes in threshold opening voltage and capacitance caused by electrical stress, the mechanism of dynamic switching characteristics of GaN HEMT devices is studied and analyzed in detail. The test results have shown that electrical stress induces trap ionization within the device, resulting in fluctuations in electric potential and ultimately leading to alterations in two critical factors of the dynamic switching characteristics of GaN HEMT devices, the parasitic capacitance and the threshold voltage. The dynamic changes in capacitance before and after electrical stress vary among devices, resulting in different dynamic switching characteristics. The test system is capable of extracting the switching waveform for visual comparison and quantitatively calculating the changes in switching parameters before and after electrical stressing. This test provides a prediction for the drift of switch parameters, offering pre-guidance for the robustness of the optimized application scheme.
本研究采用一种创新的动态开关测试系统来研究三种p型氮化镓高电子迁移率晶体管（p-GaN HEMT）器件的动态开关特性。该动态开关特性与先前关于氮化镓器件动态电阻特性的研究不同，并且可以从开关特性的角度分析氮化镓器件的稳定性。基于电应力引起阈值开启电压和电容动态变化的理论，对p-GaN HEMT器件动态开关特性的机理进行了详细研究和分析。测试结果表明，电应力会在器件内部引起陷阱电离，导致电势波动，并最终导致p-GaN HEMT器件动态开关特性的两个关键因素，即寄生电容和阈值电压发生变化。电应力前后电容的动态变化在不同器件之间有所不同，从而导致不同的动态开关特性。该测试系统能够提取开关波形以进行可视化比较，并定量计算电应力前后开关参数的变化。此测试为开关参数的漂移提供了预测，为优化应用方案的稳健性提供了预先指导。
