Lin Jyi-Tsong, Lin Kuan-Pin, Cheng Kai-Ming
Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, R.O.C..
Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, R.O.C.
Discov Nano. 2023 Sep 29;18(1):121. doi: 10.1186/s11671-023-03904-7.
In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high I current. By optimizing the gate and source-contact overlap, the tunneling efficiency is significantly enhanced, while the ambipolar effect is suppressed. Additionally, using a Schottky contact at the drain/source, instead of ion implantation drain/source, reduces leakage current and thermal budget. Moreover, the tunneling region is replaced by an intrinsic SiGe pocket posing a narrower bandgap, which increases the probability of band-to-band tunneling and enhances the I current. Our simulations are based on the feasibility of the actual process, thorough Sentaurus TCAD simulations demonstrate that the Pocket-SGO iTFET exhibits an average and minimum subthreshold swing of S.S = 16.2 mV/Dec and S.S = 4.62 mV/Dec, respectively. At V = 0.2 V, the I current is 1.81 [Formula: see text] 10 A/μm, and the I/I ratio is 1.34 [Formula: see text] 10. The Pocket-SGO iTFET design shows great potential for ultra-low-power devices that are required for the Internet of Things (IoT) and AI applications.
在本文中，我们展示了一种新型的简单独立栅隧穿场效应晶体管（iTFET），它具有源极 - 接触重叠栅极（SGO）、漏极肖特基接触和本征硅锗口袋（口袋型 - SGO iTFET）。目的是实现陡峭的亚阈值摆幅（S.S）和高电流。通过优化栅极和源极 - 接触重叠，隧穿效率显著提高，同时抑制了双极效应。此外，在漏极/源极使用肖特基接触，而不是离子注入漏极/源极，可降低漏电流和热预算。而且，隧穿区域被具有更窄带隙的本征硅锗口袋所取代，这增加了带间隧穿的概率并提高了电流。我们的模拟基于实际工艺的可行性，通过Sentaurus TCAD的全面模拟表明，口袋型 - SGO iTFET的平均和最小亚阈值摆幅分别为S.S = 16.2 mV/十倍频程和S.S = 4.62 mV/十倍频程。在V = 0.2 V时，电流为1.81×10 A/μm，I/I 比为1.34×10。口袋型 - SGO iTFET设计对于物联网（IoT）和人工智能应用所需的超低功耗器件显示出巨大潜力。
