Huang Mengting, Yu Huihui, Wei Xiaofu, Li Ruishan, Zhang Zheng, Zhang Xiankun, Zhang Yue
Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China.
Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, P. R. China.
ACS Appl Mater Interfaces. 2024 Sep 18;16(37):49620-49627. doi: 10.1021/acsami.4c08525. Epub 2024 Sep 4.
Optoelectronic logic devices (OELDs) provide a cure for many visually impaired individuals. However, traditional OELDs have limitations, such as excessive channel resistance and complex structure, leading to high supply voltage and decreased efficiency of signal transmission. We report ultralow-voltage OELDs by seriating two 2D MoTe transistors with sub-10 nm channel lengths. The short channel length and atomically flat interface result in a low-resistance light-sensing unit that can operate with a low supply voltage and function well in weak-light conditions. The devices achieve an on state without light signal input and an off state with light signal input at an ultralow supply voltage of 50 mV, lower than the retinal bearing voltage of 70 mV. Additionally, MoTe's excellent optoelectronic properties allow the device to perceive light from visible to near-infrared wavelengths with high sensitivity to weak light signals. The specific perception of visible light intensity is 0.03 mW·mm, and the near-infrared light intensity is 0.1 mW mm. The device also has a response time of 8 ms, meeting human needs. Our findings provide a promising solution for developing low-voltage artificial retinas.
光电逻辑器件（OELDs）为许多视力受损者提供了一种治疗方法。然而，传统的光电逻辑器件存在局限性，例如沟道电阻过大和结构复杂，导致电源电压高和信号传输效率降低。我们通过将两个沟道长度小于10纳米的二维碲化钼晶体管串联来报告超低电压光电逻辑器件。短沟道长度和原子级平整的界面导致了一个低电阻的光传感单元，该单元可以在低电源电压下工作，并在弱光条件下良好运行。这些器件在50毫伏的超低电源电压下实现了无光信号输入时的导通状态和有光信号输入时的截止状态，低于视网膜承受电压70毫伏。此外，碲化钼优异的光电特性使该器件能够感知从可见光到近红外波长的光，对弱光信号具有高灵敏度。对可见光强度的特定感知为0.03毫瓦·毫米，对近红外光强度为0.1毫瓦·毫米。该器件的响应时间也为8毫秒，满足人类需求。我们的研究结果为开发低电压人工视网膜提供了一个有前景的解决方案。
