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通过构建高强度有序多维封装结构缓解硅阳极的体积膨胀

Alleviating the volume expansion of silicon anodes by constructing a high-strength ordered multidimensional encapsulation structure.

作者信息

Yu Yun, Gong Haiqiang, He Xinyou, Ming Lei, Wang Xiaowei, Ou Xing

机构信息

National Energy Metal Resources and New Materials Key Laboratory, School of Metallurgy and Environment, Central South University Changsha 410083 P. R. China

出版信息

Chem Sci. 2024 Sep 5;15(38):15891-9. doi: 10.1039/d4sc04751f.

Abstract

The application of silicon-based nanomaterials in fast-charging scenarios is hindered by volume expansion during lithiation and side reactions induced by surface effects. Constructing a robust encapsulation structure with high mechanical strength and conductivity is pivotal for optimizing the electrochemical performance of nanostructured silicon anodes. Herein, we propose a multifaceted hierarchical encapsulation structure featuring excellent mechanical strength and high conductivity by sequentially incorporating SiO , hard carbon, and closed-pore carbon layers around silicon quantum dots, thereby enabling stable cycling at high current densities. In this structure, the ultra-thin SiO layer strengthens the Si-C interface, while the outermost carbon matrix with closed pores functions both as a conductive network and a barrier against electrolyte intrusion. Notably, the synthesized material exhibits a specific capacity of 1506 mA h g with 90.17% retention after 300 cycles at 1.0 A g. After 500 cycles at 5.0 A g, it retains 640.4 mA h g, over 70% of its initial capacity.

摘要

硅基纳米材料在快速充电场景中的应用受到锂化过程中的体积膨胀和表面效应引起的副反应的阻碍。构建具有高机械强度和导电性的坚固封装结构对于优化纳米结构硅阳极的电化学性能至关重要。在此,我们提出了一种多面分级封装结构,通过在硅量子点周围依次引入SiO 、硬碳和闭孔碳层,具有优异的机械强度和高导电性,从而能够在高电流密度下实现稳定循环。在这种结构中,超薄的SiO 层加强了Si-C界面,而具有闭孔的最外层碳基体既作为导电网络又作为防止电解质侵入的屏障。值得注意的是,合成材料在1.0 A g下循环300次后,比容量为1506 mA h g,保留率为90.17%。在5.0 A g下循环500次后,它保留了640.4 mA h g,超过其初始容量的70%。

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