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用于量子光机电的具有高品质因数的纳米机械晶体氮化铝谐振器。

Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics.

作者信息

Ciers Anastasiia, Jung Alexander, Ciers Joachim, Nindito Laurentius Radit, Pfeifer Hannes, Dadgar Armin, Strittmatter André, Wieczorek Witlef

机构信息

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, SE-412 96, Sweden.

Institute of Physics, Otto-von-Guericke-University Magdeburg, 39106, Magdeburg, Germany.

出版信息

Adv Mater. 2024 Nov;36(44):e2403155. doi: 10.1002/adma.202403155. Epub 2024 Sep 17.

Abstract

High-quality factor (Q) mechanical resonators are crucial for applications where low noise and long coherence time are required, as mirror suspensions, quantum cavity optomechanical devices, or nanomechanical sensors. Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor. These techniques have been employed for high-Q mechanical resonators made from amorphous materials and, recently, from crystalline materials such as InGaP, SiC, and Si. A strained crystalline film exhibiting substantial piezoelectricity expands the capability of high-Q nanomechanical resonators to directly utilize electronic degrees of freedom. In this work, nanomechanical resonators with Q up to 2.9 × 10 made from tensile-strained 290 nm-thick AlN are realized. AlN is an epitaxially-grown crystalline material offering strong piezoelectricity. Nanomechanical resonators that exploit dissipation dilution and strain engineering to reach a Q × f-product approaching 10 Hz at room temperature are demonstrated. A novel resonator geometry is realized, triangline, whose shape follows the Al-N bonds and offers a central pad patterned with a photonic crystal. This allows to reach an optical reflectivity above 80% for efficient coupling to out-of-plane light. The presented results pave the way for quantum optoelectromechanical devices at room temperature based on tensile-strained AlN.

摘要

高品质因数(Q)的机械谐振器对于需要低噪声和长相干时间的应用至关重要,例如镜面悬架、量子腔光机械装置或纳米机械传感器。材料中的拉伸应变使得能够使用耗散稀释和应变工程技术,这些技术可以提高机械品质因数。这些技术已应用于由非晶材料制成的高Q机械谐振器,最近也应用于由InGaP、SiC和Si等晶体材料制成的谐振器。表现出显著压电性的应变晶体薄膜扩展了高Q纳米机械谐振器直接利用电子自由度的能力。在这项工作中,实现了由拉伸应变的290nm厚AlN制成的Q高达2.9×10的纳米机械谐振器。AlN是一种外延生长的晶体材料,具有很强的压电性。展示了利用耗散稀释和应变工程在室温下达到Q×f乘积接近10Hz的纳米机械谐振器。实现了一种新颖的谐振器几何形状——三角线,其形状遵循Al-N键,并提供带有光子晶体图案的中央焊盘。这使得能够实现高于80%的光反射率,以便有效地耦合到面外光。所呈现的结果为基于拉伸应变AlN的室温量子光电器件铺平了道路。

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