碳化硅：材料生长、器件加工及应用
Silicon Carbide: Material Growth, Device Processing, and Applications.
作者信息
Vivona Marilena, Jennings Mike
机构信息
Institute for Microelectronics and Microsystems, National Research Council of Italy, 95121 Catania, Italy.
Centre for Integrative Semiconductor Materials (CISM), Swansea University, Swansea SA1 8EN, UK.
出版信息
Materials (Basel). 2024 Sep 18;17(18):4571. doi: 10.3390/ma17184571.
Abstract
The continuous demand for electronic devices operating at increasing current and power levels, as well as at high temperatures and in harsh environments, has driven research into wide-band gap (WBG) semiconductors over the last three decades [...].
摘要
在过去三十年里，对工作于不断增加的电流和功率水平、以及高温和恶劣环境下的电子设备的持续需求，推动了对宽带隙（WBG）半导体的研究 [...]。
相似文献
1
Silicon Carbide: Material Growth, Device Processing, and Applications.碳化硅：材料生长、器件加工及应用
Materials (Basel). 2024 Sep 18;17(18):4571. doi: 10.3390/ma17184571.
2
Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.用于中高功率应用的宽带隙半导体开关器件驱动电路综述。
Micromachines (Basel). 2021 Jan 8;12(1):65. doi: 10.3390/mi12010065.
3
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.立方碳化硅功率电子器件技术的现状与展望
Materials (Basel). 2021 Oct 5;14(19):5831. doi: 10.3390/ma14195831.
4
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.用于碳化硅和氮化镓电子器件的高介电常数二元氧化物薄膜的结构与绝缘行为
Materials (Basel). 2022 Jan 22;15(3):830. doi: 10.3390/ma15030830.
5
Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, GaO, and Diamond.用于汽车和节能应用的电力电子半导体材料——碳化硅、氮化镓、氧化镓和金刚石。
Z Anorg Allg Chem. 2017 Nov 17;643(21):1312-1322. doi: 10.1002/zaac.201700270. Epub 2017 Oct 20.
6
Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications.研究不同类型碳化硅晶体的耐腐蚀性：从能源领域到先进应用
Langmuir. 2024 Jun 18;40(24):12322-12342. doi: 10.1021/acs.langmuir.4c01805. Epub 2024 Jun 3.
7
Fundamental research on semiconductor SiC and its applications to power electronics.半导体碳化硅的基础研究及其在电力电子学中的应用。
Proc Jpn Acad Ser B Phys Biol Sci. 2020;96(7):235-254. doi: 10.2183/pjab.96.018.
8
Ionization-induced annealing of pre-existing defects in silicon carbide.碳化硅中预先存在缺陷的电离诱导退火
Nat Commun. 2015 Aug 12;6:8049. doi: 10.1038/ncomms9049.
9
Selective Doping in Silicon Carbide Power Devices.碳化硅功率器件中的选择性掺杂
Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923.
10
Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet.宽禁带半导体在美国轻型电动汽车车队中的能源影响。
Environ Sci Technol. 2015 Sep 1;49(17):10294-302. doi: 10.1021/acs.est.5b01627. Epub 2015 Aug 13.
引用本文的文献
1
A Review of Novel Die Attach Materials for High-Temperature WBG Power Electronic Applications.用于高温宽禁带功率电子应用的新型芯片粘结材料综述
Materials (Basel). 2025 Aug 15;18(16):3841. doi: 10.3390/ma18163841.
2
Optimization and performance study of large aspect ratio SiC microgrooves by waterjet assisted laser machining.
Sci Rep. 2025 Aug 9;15(1):29226. doi: 10.1038/s41598-025-14499-7.
本文引用的文献
1
Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC.碳化硅上双层外延石墨烯场效应晶体管的局部特性与性能分析
Materials (Basel). 2024 Jul 18;17(14):3553. doi: 10.3390/ma17143553.
2
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.通过脉冲高温反向偏置和负栅极偏置应力评估4H-SiC MOSFET阈值电压不稳定性
Materials (Basel). 2024 Apr 20;17(8):1908. doi: 10.3390/ma17081908.
3
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs.采用电子俘获模型对电荷到击穿进行建模，以分析碳化硅功率金属氧化物半导体场效应晶体管中的热栅氧化层失效机制。
Materials (Basel). 2024 Mar 22;17(7):1455. doi: 10.3390/ma17071455.
4
Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis.利用飞行时间二次离子质谱（ToF-SIMS）和显微拉曼分析对通过物理气相传输（PVT）法生长的4H-SiC单晶的变色转换现象的特征研究
Materials (Basel). 2024 Feb 22;17(5):1005. doi: 10.3390/ma17051005.
5
Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity.Pt/SiC和Cr/SiC肖特基接触不均匀性的全温区深入分析
Materials (Basel). 2024 Jan 13;17(2):400. doi: 10.3390/ma17020400.
6
AlO Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.通过原子层沉积生长的AlO层作为3C-SiC MOS器件中的栅极绝缘体。
Materials (Basel). 2023 Aug 15;16(16):5638. doi: 10.3390/ma16165638.
7
SiC Doping Impact during Conducting AFM under Ambient Atmosphere.在环境大气下进行导电原子力显微镜（AFM）时碳化硅（SiC）掺杂的影响。
Materials (Basel). 2023 Aug 1;16(15):5401. doi: 10.3390/ma16155401.
8
Novel Photonic Applications of Silicon Carbide.碳化硅的新型光子应用
Materials (Basel). 2023 Jan 22;16(3):1014. doi: 10.3390/ma16031014.
9
Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis.基于霍尔分析的4H-SiC MOSFET载流子迁移率研究
Materials (Basel). 2022 Sep 28;15(19):6736. doi: 10.3390/ma15196736.
10
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.用于高频开关的4H-SiC平面功率MOSFET的一种新型单元拓扑结构。
Materials (Basel). 2022 Sep 27;15(19):6690. doi: 10.3390/ma15196690.
Zotero 插件