Liu Chenchen, Cao Yu, Lu Haozhe, Lin Yanxia, Jin Chuanhong, Zhang Zhiyong
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
ACS Appl Mater Interfaces. 2024 Oct 2. doi: 10.1021/acsami.4c11320.
Wafer-scale aligned carbon nanotubes (A-CNTs) are promising candidate semiconductors for building high-performance complementary metal-oxide-semiconductor (CMOS) transistors for future integrated circuits (ICs). A-CNT-based p-type field-effect transistors (P-FETs) have demonstrated excellent performance and scalability down to sub-10 nm nodes. However, the development of A-CNT n-type FETs (N-FETs) lags far behind, in regard to their electronic performance and device scaling. In this work, we fabricated top-gated N-FETs based on A-CNTs with a scandium (Sc)-contacted source and drain. High-performance A-CNT N-FETs were demonstrated with record on-state current () exceeding 1 mA/μm and peak transconductance () of 0.4 mS/μm. Interestingly, the A-CNT N-FETs exhibited abnormal scaling behavior owing to the lateral oxidation of low-work function source/drain contacts, leading to formidable challenges to scale both the gate length () and the contact length () at the same time. Understanding of the abnormal scaling behavior contributes to seeking solutions for high-performance A-CNT N-FETs, and it paves the way for future CNT CMOS digital IC technology.
晶圆级排列的碳纳米管（A-CNTs）是用于构建未来集成电路（IC）高性能互补金属氧化物半导体（CMOS）晶体管的有前途的候选半导体。基于A-CNT的p型场效应晶体管（P-FET）已展示出优异的性能和可扩展性，可缩小至亚10纳米节点。然而，A-CNT n型场效应晶体管（N-FET）在电子性能和器件缩放上的发展却远远落后。在这项工作中，我们制造了基于A-CNTs的顶栅N-FET，其源极和漏极与钪（Sc）接触。高性能的A-CNT N-FET被证明具有超过1 mA/μm的创纪录导通电流（）和0.4 mS/μm的峰值跨导（）。有趣的是，由于低功函数源极/漏极接触的横向氧化，A-CNT N-FET表现出异常的缩放行为，这给同时缩小栅极长度（）和接触长度（）带来了巨大挑战。对异常缩放行为的理解有助于为高性能A-CNT N-FET寻找解决方案，并为未来的碳纳米管CMOS数字IC技术铺平道路。
