National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
Department of Physics, Shaoxing University, Shaoxing 312000, China.
Sci Rep. 2017 Apr 4;7:45667. doi: 10.1038/srep45667.
ZrTe and HfTe have attracted increasingly attention recently since the theoretical prediction of being topological insulators (TIs). However, subsequent works show many contradictions about their topolog-ical nature. Three possible phases, i.e. strong TI, weak TI, and Dirac semi-metal, have been observed in different experiments until now. Essentially whether ZrTe or HfTe has a band gap or not is still a question. Here, we present detailed first-principles calculations on the electronic and topological prop-erties of ZrTe and HfTe on variant volumes and clearly demonstrate the topological phase transition from a strong TI, going through an intermediate Dirac semi-metal state, then to a weak TI when the crystal expands. Our work might give a unified explain about the divergent experimental results and propose the crucial clue to further experiments to elucidate the topological nature of these materials.
ZrTe 和 HfTe 最近因其拓扑绝缘体 (TI) 的理论预测而引起了越来越多的关注。然而,随后的工作表明,它们的拓扑性质存在许多矛盾。到目前为止,不同的实验已经观察到了三种可能的相,即强 TI、弱 TI 和狄拉克半金属。ZrTe 或 HfTe 是否具有能隙本质上仍然是一个问题。在这里,我们对不同体积的 ZrTe 和 HfTe 的电子和拓扑性质进行了详细的第一性原理计算,并清楚地证明了当晶体膨胀时,从强 TI 到中间的狄拉克半金属状态再到弱 TI 的拓扑相变。我们的工作可能为发散的实验结果提供了一个统一的解释,并提出了进一步实验以阐明这些材料的拓扑性质的关键线索。