Ngo Hai Dang, Truong Vo Doan Thanh, Le Van Qui, Pham Hoai Phuong, Pham Thi Kim Hang
Faculty of Applied Sciences, Ho Chi Minh University of Technology and Education, 720700 Ho Chi Minh City, Vietnam.
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300093, Taiwan.
Beilstein J Nanotechnol. 2024 Oct 14;15:1253-1259. doi: 10.3762/bjnano.15.101. eCollection 2024.
High spin polarization and low resistivity of FeO at room temperature have been an appealing topic in spintronics with various promising applications. High-quality FeO thin films are a must to achieve the goals. In this report, FeO films on different substrates (SiO/Si(100), MgO(100), and MgO/Ta/SiO/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline FeO film grown on MgO/Ta/SiO/Si(100) presented very interesting morphology and structure characteristics. More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of FeO thin films compared to cases of no or just a single buffering layer.
室温下FeO的高自旋极化率和低电阻率一直是自旋电子学中一个引人关注的话题，具有各种有前景的应用。高质量的FeO薄膜是实现这些目标的必要条件。在本报告中，通过射频（RF）溅射在室温下在不同衬底（SiO/Si(100)、MgO(100)和MgO/Ta/SiO/Si(100)）上制备了FeO薄膜，并在450°C下退火2小时。用原子力显微镜、X射线衍射仪和振动样品磁强计对沉积样品的形貌、结构和磁性进行了表征。生长在MgO/Ta/SiO/Si(100)上的多晶FeO薄膜呈现出非常有趣的形貌和结构特征。更重要的是，与没有缓冲层或只有单个缓冲层的情况相比，由于MgO/Ta缓冲层的作用导致的晶粒尺寸和结构变化对FeO薄膜的饱和磁化强度和矫顽力有强烈影响。
