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评估尺寸对铜薄膜热导率和电子 - 声子散射率的影响,以对马蒂森法则进行实验验证。

Evaluating size effects on the thermal conductivity and electron-phonon scattering rates of copper thin films for experimental validation of Matthiessen's rule.

作者信息

Islam Md Rafiqul, Karna Pravin, Tomko John A, Hoglund Eric R, Hirt Daniel M, Hoque Md Shafkat Bin, Zare Saman, Aryana Kiumars, Pfeifer Thomas W, Jezewski Christopher, Giri Ashutosh, Landon Colin D, King Sean W, Hopkins Patrick E

机构信息

Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA.

Department of Mechanical Industrial and Systems Engineering, University of Rhode Island, Kingston, RI, 02881, USA.

出版信息

Nat Commun. 2024 Oct 24;15(1):9167. doi: 10.1038/s41467-024-53441-9.

Abstract

As metallic nanostructures shrink towards the size of the electronic mean free path, thermal conductivity decreases due to increased electronic scattering rates. Matthiessen's rule is commonly applied to assess changes in electron scattering rates, although this rule has not been validated experimentally at typical operating temperatures for most of the electronic systems (e.g., near room temperature). In this study, we experimentally evaluate the validity of Matthiessen's rule in determining the thermal conductivity of thin metal films by measuring the in-plane thermal conductivity and electronic scattering rates of copper (Cu) films with varying thicknesses (27 nm - 5 µm), microstructures, and grain boundary segregation. Comparing total electron scattering rates measured with infrared ellipsometry to infrared ultrafast pump-probe measurements, we find that the electron-phonon coupling factor is independent of film thickness, whereas the total electronic scattering rate increases with decreasing film thickness. Our findings provide experimental validation of Matthiessen's rule for electron transport in thin metal films at room temperature and also introduce an approach to discern critical heat transfer processes in thin metal interconnects, which holds significance for the advancement of future CMOS technology.

摘要

随着金属纳米结构尺寸缩小至电子平均自由程大小,由于电子散射速率增加,热导率会降低。尽管在大多数电子系统的典型工作温度下(例如接近室温时),该规则尚未通过实验验证,但马蒂森法则通常用于评估电子散射速率的变化。在本研究中,我们通过测量不同厚度(27纳米至5微米)、微观结构和晶界偏析的铜(Cu)薄膜的面内热导率和电子散射速率,对马蒂森法则在确定薄金属膜热导率方面的有效性进行了实验评估。将用红外椭偏仪测量的总电子散射速率与红外超快泵浦 - 探测测量结果进行比较,我们发现电子 - 声子耦合因子与薄膜厚度无关,而总电子散射速率随薄膜厚度减小而增加。我们的研究结果为室温下薄金属膜中电子输运的马蒂森法则提供了实验验证,同时还引入了一种辨别薄金属互连中关键热传递过程的方法,这对未来CMOS技术的发展具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4621/11502751/9e3c75a43532/41467_2024_53441_Fig1_HTML.jpg

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