Tsay Chien-Yie, Chen Yun-Chi, Tsai Hsuan-Meng, Liao Kai-Hsiang
Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan.
Materials (Basel). 2024 Oct 14;17(20):5011. doi: 10.3390/ma17205011.
Both CuI and CuI:Zn semiconductor thin films, along with MSM-structured UV photodetectors, were prepared on flexible mica substrates at low temperature (150 °C) by a wet chemical method. The two CuI-based films exhibited a polycrystalline phase with an optical bandgap energy close to 3.0 eV. Hall effect measurements indicated that the CuI thin film sample had p-type conductivity, while the CuI:Zn thin film sample exhibited n-type conductivity, with the latter showing a higher carrier mobility of 14.78 cm/Vs compared to 7.67 cm/Vs for the former. The I-V curves of both types of photodetectors showed asymmetric rectification characteristics with rectification ratios at ±3 V of 5.23 and 14.3 for the CuI and CuI:Zn devices, respectively. Flexible CuI:Zn devices exhibited significantly better sensitivity, responsivity, and specific detectivity than CuI devices both before and after static bending tests. It was found that, while the optoelectronic performance of flexible CuI-based photodetectors degraded under tensile stress during static bending tests, they still exhibited good reproducibility and repeatability in their photoresponses.
通过湿化学方法在柔性云母衬底上低温（150°C）制备了CuI和CuI:Zn半导体薄膜以及MSM结构的紫外光电探测器。两种基于CuI的薄膜呈现出多晶相，光学带隙能量接近3.0 eV。霍尔效应测量表明，CuI薄膜样品具有p型导电性，而CuI:Zn薄膜样品呈现n型导电性，后者的载流子迁移率更高，为14.78 cm²/Vs，而前者为7.67 cm²/Vs。两种类型光电探测器的I-V曲线均显示出不对称整流特性，CuI和CuI:Zn器件在±3 V时的整流比分别为5.23和14.3。在静态弯曲测试前后，柔性CuI:Zn器件的灵敏度、响应度和比探测率均明显优于CuI器件。研究发现，虽然柔性CuI基光电探测器在静态弯曲测试中的拉伸应力下光电性能会下降，但它们在光响应中仍表现出良好的可重复性和再现性。
