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铁基涂层导体的低成本架构。

Low-cost architecture for iron-based coated conductors.

作者信息

Piperno L, Vannozzi A, Rizzo F, Masi A, Rufoloni A, Celentano G, Braccini V, Cialone M, Iebole M, Martinelli A, Savio L, Putti M, Meledin A, Sotgiu G

机构信息

ENEA, Frascati Research Centre, Via E. Fermi, 45, 00044 Frascati, Italy.

Roma Tre University, Via Vito Volterra, Rome, Italy.

出版信息

iScience. 2024 Sep 26;27(10):111032. doi: 10.1016/j.isci.2024.111032. eCollection 2024 Oct 18.

Abstract

The design of iron-based coated conductors (IBS-CC) with a simplified architecture is possible thanks to the material properties that allow for milder requirements on the template crystalline quality. With respect to the state-of-the-art multilayered layout, it is possible to use a single buffer layer that remains necessary for protection and to promote the oriented growth of the superconducting film. In this work, Fe(Se,Te) films are grown via pulsed laser deposition (PLD) on commercial tapes using a single, chemically deposited, CeO-based buffer layer, and interesting properties are obtained. In detail, the preparation and characterization of the buffer layer is presented, along with the detailed analysis of the Fe(Se,Te) current transport properties. The samples show superconducting transitions with around 12 K and critical current densities of ∼0.1 MA cm at 4.2 K at zero field. These results show that the design of a low-cost IBS-CC with a single chemical buffer layer is possible.

摘要

得益于铁基涂层导体(IBS - CC)的材料特性,其对模板晶体质量的要求较为宽松,因此可以采用简化的结构设计。相对于当前的多层布局,有可能使用单一的缓冲层,该缓冲层对于保护和促进超导膜的取向生长仍然是必要的。在这项工作中,通过脉冲激光沉积(PLD)在商业带上生长Fe(Se,Te)薄膜,使用单一的化学沉积的基于CeO的缓冲层,并获得了有趣的特性。详细介绍了缓冲层的制备和表征,以及对Fe(Se,Te)电流传输特性的详细分析。样品在零场下4.2 K时显示出约12 K的超导转变和约0.1 MA/cm²的临界电流密度。这些结果表明,采用单一化学缓冲层设计低成本的IBS - CC是可行的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6d31/11519430/89b1aeb3627b/fx1.jpg

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