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在二维扭曲双层WSe₂中实现具有强电子局域化的一维莫尔链。

Realizing one-dimensional moiré chains with strong electron localization in two-dimensional twisted bilayer WSe.

作者信息

Ren Ya-Ning, Ren Hui-Ying, Watanabe Kenji, Taniguchi Takashi, He Lin

机构信息

Center for Advanced Quantum Studies, School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China.

Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing 100875, China.

出版信息

Proc Natl Acad Sci U S A. 2024 Nov 5;121(45):e2405582121. doi: 10.1073/pnas.2405582121. Epub 2024 Oct 30.

Abstract

Two-dimensional (2D) moiré systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially filled flat bands. A natural question arises: Is it possible to expand the 2D correlated moiré physics to one-dimensional (1D) that electron-electron correlation is expected to be further enhanced? This requires selectively doping of 1D moiré chain, which seems to be not within the grasp of today's technology. Therefore, an experimental demonstration of the 1D moiré chain with partially filled electronic states remains absent. Here, we show that we can introduce 1D boundaries, separating two regions with different twist angles, in twisted bilayer WSe (tWSe) by using scanning tunneling microscopy (STM) and demonstrate that the electronic states of 1D moiré sites along the boundaries can be selectively filled. The strong localized charge states of correlated moiré electrons in the 1D moiré chain can be directly imaged and manipulated by combining a back-gate voltage with the STM bias voltage. Our results open the door for realizing new correlated electronic states of the 1D moiré chain in 2D systems.

摘要

基于扭曲双层石墨烯和过渡金属二硫族化合物的二维(2D)莫尔系统为研究部分填充的平带中强电子-电子相互作用驱动的涌现现象提供了一个很有前景的平台。一个自然的问题出现了:是否有可能将二维相关莫尔物理扩展到一维,在一维中电子-电子关联预计会进一步增强?这需要对一维莫尔链进行选择性掺杂,而这似乎超出了当今技术的能力范围。因此,尚未有关于具有部分填充电子态的一维莫尔链的实验证明。在这里,我们表明,通过使用扫描隧道显微镜(STM),我们可以在扭曲双层WSe(tWSe)中引入一维边界,将具有不同扭曲角的两个区域分隔开,并证明沿边界的一维莫尔位点的电子态可以被选择性填充。通过将背栅电压与STM偏置电压相结合,可以直接成像和操纵一维莫尔链中相关莫尔电子的强局域电荷态。我们的结果为在二维系统中实现一维莫尔链的新相关电子态打开了大门。

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