Vo Thi Muoi, Nguyen Thi My Huyen, He Rui, Bark Chung Wung
Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, South Korea.
Institute of Chemical Technology, Vietnam Academy of Science and Technology, 1A TL29 Street, Thanh Loc Ward, District 12, Ho Chi Minh City 700000, Viet Nam.
ACS Omega. 2024 Nov 4;9(46):46030-46040. doi: 10.1021/acsomega.4c06061. eCollection 2024 Nov 19.
Recently, spiro-OMeTAD has gained prominence as a hole-transporting material (HTM) in high-performance perovskite solar cells (PSCs) due to its superior properties, cutting-edge HOMO state of energy, and solution processability. To promote hole mobility and conductivity, hygroscopic dopants and additives such as lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) and 4--butylpyridine (TBP) are typically incorporated. However, these components can lead to aggregation and hydrolysis in ambient conditions, forming pinholes and voids in the films. In this study, we introduce CuO as a spiro-OMeTAD additive to reduce voids and improve the quality of films. Incorporating CuO alleviates TBP evaporation and provides a more consistent dispersion of Li-TFSI, decreasing the formation of pinholes and bubbles. As a result, additional anions are added to spiro-OMeTAD during the oxidation process, promoting the conductivity and hole mobility of the hole-transporting layer and thus boosting PSC performance. Thus, the power conversion efficiency (PCE) percentage of the CuO-modified HTM reaches 14.17%, surpassing that of the control HTM at 12.25%. Furthermore, the introduction of CuO protects the perovskite layer from water-induced deterioration, ensuring the stability of the PSCs. Our findings offer a promising approach to enhancing both the performance and stability of HTMs and PSCs.
最近，螺环-OMeTAD作为一种空穴传输材料（HTM）在高性能钙钛矿太阳能电池（PSC）中崭露头角，这归因于其优异的性能、前沿的最高占据分子轨道（HOMO）能级以及溶液可加工性。为了提高空穴迁移率和导电性，通常会加入诸如双（三氟甲磺酰）亚胺锂（Li-TFSI）和4-叔丁基吡啶（TBP）等吸湿掺杂剂和添加剂。然而，这些成分在环境条件下会导致聚集和水解，在薄膜中形成针孔和空隙。在本研究中，我们引入氧化铜（CuO）作为螺环-OMeTAD添加剂以减少空隙并提高薄膜质量。加入CuO可减轻TBP的蒸发，并使Li-TFSI的分散更加均匀，减少针孔和气泡的形成。结果，在氧化过程中额外的阴离子被添加到螺环-OMeTAD中，促进了空穴传输层的导电性和空穴迁移率，从而提高了PSC的性能。因此，CuO改性的HTM的功率转换效率（PCE）百分比达到14.17%，超过了对照HTM的12.25%。此外，CuO的引入保护了钙钛矿层免受水诱导的劣化，确保了PSC的稳定性。我们的研究结果为提高HTM和PSC的性能及稳定性提供了一种有前景的方法。
