一种包含硅绝缘栅双极型晶体管（Si IGBT）和碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）的1200伏混合功率开关的特性

Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET.

作者信息

Sheikhan Alireza, Narayanan E M Sankara

机构信息

Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, UK.

出版信息

Micromachines (Basel). 2024 Oct 31;15(11):1337. doi: 10.3390/mi15111337.

DOI:10.3390/mi15111337

PMID:39597149

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11596964/

Abstract

Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs.

摘要

混合功率开关（HPS）结合了碳化硅（SiC）单极型器件和硅双极型器件的优点，因此能够弥合这些技术之间的差距。本文介绍了一种基于最新SiC金属氧化物半导体场效应晶体管（MOSFET）和硅绝缘栅双极型晶体管（IGBT）技术的混合功率开关配置的性能。通过在各种条件下对其特性进行实验测量来评估该器件。结果表明，混合功率开关能够实现与SiC MOSFET一样低的开关损耗，同时具备IGBT的高电流能力，且成本不会显著增加。