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嵌入式铁电体中的长程对称性破缺。

Long-range symmetry breaking in embedded ferroelectrics.

作者信息

Simons Hugh, Haugen Astri Bjørnetun, Jakobsen Anders Clemen, Schmidt Søren, Stöhr Frederik, Majkut Marta, Detlefs Carsten, Daniels John E, Damjanovic Dragan, Poulsen Henning Friis

机构信息

Department of Physics, Technical University of Denmark, Kongens Lyngby, Denmark.

Department of Energy Conversion and Storage, Technical University of Denmark, Roskilde, Denmark.

出版信息

Nat Mater. 2018 Sep;17(9):814-819. doi: 10.1038/s41563-018-0116-3. Epub 2018 Jun 25.

Abstract

The characteristic functionality of ferroelectric materials is due to the symmetry of their crystalline structure. As such, ferroelectrics lend themselves to design approaches that manipulate this structural symmetry by introducing extrinsic strain. Using in situ dark-field X-ray microscopy to map lattice distortions around deeply embedded domain walls and grain boundaries in BaTiO, we reveal that symmetry-breaking strain fields extend up to several micrometres from domain walls. As this exceeds the average domain width, no part of the material is elastically relaxed, and symmetry is universally broken. Such extrinsic strains are pivotal in defining the local properties and self-organization of embedded domain walls, and must be accounted for by emerging computational approaches to material design.

摘要

铁电材料的特性功能归因于其晶体结构的对称性。因此,铁电材料适用于通过引入外部应变来操纵这种结构对称性的设计方法。利用原位暗场X射线显微镜绘制BaTiO中深埋的畴壁和晶界周围的晶格畸变,我们发现对称性破缺应变场从畴壁延伸至几微米。由于这超过了平均畴宽度,材料的任何部分都没有弹性松弛,对称性被普遍打破。这种外部应变对于定义嵌入畴壁的局部性质和自组织至关重要,并且必须由新兴的材料设计计算方法来考虑。

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