High-performance near-infrared photodetectors based on gate-controlled graphene-germanium Schottky junction with split active junction.

The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared detection capability. The strengthened internal electric field in the split active junctions enabled efficient collection of photocarriers, resulting in a responsivity of 2.02 A W and a specific detectivity of 5.28 × 10 Jones with reduced dark current and improved external quantum efficiency; these results are more than doubled compared with the responsivity of 0.85 A W and detectivity of 1.69 × 10 Jones for a single active junction device. The responsivity of the optimized structure is 1.7, 2.7, and 39 times higher than that of previously reported graphene/Ge with AlO interfacial layer, gate-controlled graphene/Ge, and simple graphene/Ge heterostructure photodetectors, respectively.