具有嵌入式MOS电容器的高响应率石墨烯/硅光电二极管的I-V和C-V特性分析
I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.
作者信息
Luongo Giuseppe, Giubileo Filippo, Genovese Luca, Iemmo Laura, Martucciello Nadia, Di Bartolomeo Antonio
机构信息
Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy.
CNR-SPIN Salerno, via Giovanni Paolo II 132, 84084 Fisciano, Italy.
出版信息
Nanomaterials (Basel). 2017 Jun 27;7(7):158. doi: 10.3390/nano7070158.
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.
我们研究了温度和光照对石墨烯/硅肖特基二极管的电流-电压（I-V）和电容-电压（C-V）特性的影响。该器件呈现出反向偏置光电流超过正向电流的现象，并实现了高达2.5 A / W的光响应度。我们表明，增强的光电流是由于从与二极管并联连接的寄生石墨烯/二氧化硅/硅电容器注入到石墨烯/硅结中的光生载流子所致。热生载流子也会发生同样的机制，这导致了在石墨烯/硅结中经常观察到的高漏电流。
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