Wang Yun-Ran, Han Im Sik, Hopkinson Mark
Department of Electronic and Electrical Engineering, The University of Sheffield, Sir Frederick Mappin Building, Sheffield S1 3JD, UK.
Nanophotonics. 2023 Jan 10;12(8):1469-1479. doi: 10.1515/nanoph-2022-0584. eCollection 2023 Apr.
Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics. The emerging field of QD-based nanophotonics requires the deterministic integration of single or multiple QD structures into photonic architectures. However, the natural inhomogeneity and spatial randomness of self-assembled QDs limit their potential, and the reliable formation of homogeneous and ordered QDs during epitaxy still presents a challenge. Here, we demonstrate the fabrication of regular arrays of single III-V QDs and QRs using molecular beam epitaxy assisted by direct laser interference patterning. Both droplet epitaxy (DE) GaAs/AlGaAs QDs and QRs and Stranski-Krastanov (SK) InAs/GaAs QDs are presented. The resulting QD structures exhibit high uniformity and good optical quality, in which a record-narrow photoluminescence linewidth of ∼17 meV from patterned GaAs QD arrays is achieved. Such QD and QR arrays fabricated through this novel optical technique constitute a next-generation platform for functional nanophotonic devices and act as useful building blocks for the future quantum revolution.
外延生长的半导体量子点（QD）和量子环（QR）已被证明是单光子和纠缠光子对的优秀来源，可用于量子光子学中的应用。基于量子点的纳米光子学这一新兴领域要求将单个或多个量子点结构确定性地集成到光子架构中。然而，自组装量子点的固有不均匀性和空间随机性限制了它们的潜力，并且在外延过程中可靠地形成均匀且有序的量子点仍然是一个挑战。在此，我们展示了使用直接激光干涉图案化辅助的分子束外延技术制造单个III-V族量子点和量子环的规则阵列。展示了液滴外延（DE）GaAs/AlGaAs量子点和量子环以及斯特兰斯基-克拉斯坦诺夫（SK）InAs/GaAs量子点。所得的量子点结构表现出高均匀性和良好的光学质量，其中从图案化的GaAs量子点阵列获得了约17 meV的创纪录窄光致发光线宽。通过这种新颖的光学技术制造的此类量子点和量子环阵列构成了功能性纳米光子器件的下一代平台，并作为未来量子革命的有用构建块。
