Nan Shuai, Xu Shipu, Ren Yunlong, Yuan Xin, Ma Yuhua, Zhai Pengfei, Zhang Fuxiang
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Adv Sci (Weinh). 2025 Feb;12(6):e2411391. doi: 10.1002/advs.202411391. Epub 2024 Dec 16.
Flexoelectric coefficient is a tetradic and its introduction enables centrosymmetric materials to exhibit piezoelectricity. However, the flexoelectric paradigm currently lacks a strategy to effectively tune the strain gradient for optimal electro-mechanical coupling. This study proposes a quantized collision model accessible through ionic irradiation technology to explore the flexoelectricity and precisely modulate the strain gradient. The lattice strain is introduced in SrTiO (STO) single crystals and tuned broadly by irradiation with ions of He, C, and P at dose of 1 × 10 and 2 × 10 ion cm, respectively. Under C ion irradiation at a dose of 2 × 10 ion cm, thin-film X-ray diffraction reveals a strain gradient up to ≈0.65% nm. The resulted polarization is found to orient out-of-plane, as observed through X-ray reciprocal space mapping and high-angle annular dark field scanning transmission electron microscopy. Piezoresponse force microscopy characterization reveals that the electric-induced out-of-plane polarization reversal emerges at room temperature, corresponding to a stain gradient ≈0.05% nm in STO's flexoelectric response. This study demonstrates that ion irradiation is an effective strategy for precisely tuning the flexoelectric properties.
挠曲电系数是一个四阶张量,它的引入使中心对称材料能够表现出压电性。然而,目前挠曲电范式缺乏一种有效调节应变梯度以实现最佳机电耦合的策略。本研究提出了一种可通过离子辐照技术实现的量化碰撞模型,以探索挠曲电效应并精确调制应变梯度。在SrTiO(STO)单晶中引入晶格应变,并分别用剂量为1×10和2×10离子/cm的He、C和P离子辐照进行广泛调节。在剂量为2×10离子/cm的C离子辐照下,薄膜X射线衍射显示应变梯度高达≈0.65%nm。通过X射线倒易空间映射和高角度环形暗场扫描透射电子显微镜观察发现,产生的极化沿面外方向取向。压电力显微镜表征表明,在室温下出现了电致面外极化反转,对应于STO挠曲电响应中≈0.05%nm的应变梯度。本研究表明,离子辐照是精确调节挠曲电性能的有效策略。