Liu Jiamin, Xie Deng, Feng Zhe Chuan, Nafisa Manika Tun, Wan Lingyu, Qiu Zhi-Ren, Wuu Dong-Sing, Zhang Chuanwei, Yiin Jeffrey, Lin Hao-Hsiung, Lu Weijie, Klein Benjamin, Ferguson Ian T, Liu Shiyuan
State Key Laboratory of Intelligent Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
School of Electronic & Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350000, China.
Nanomaterials (Basel). 2024 Dec 5;14(23):1957. doi: 10.3390/nano14231957.
MgZnO possesses a tunable bandgap and can be prepared at relatively low temperatures, making it suitable for developing optoelectronic devices. MgZnO (~0.1) films were grown on sapphire by metal-organic vapor phase epitaxy under different substrate-growth temperatures of 350-650 °C and studied by multiple characterization technologies like X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Raman scattering, extended X-ray absorption fine structure (EXAFS), and first-principle calculations. The effects of on the optical, structural, and surface properties of the MgZnO films were studied penetratively. An XRD peak of nearly 35° was produced from MgZnO (0002) diffraction, while a weak peak of ~36.5° indicated MgO phase separation. SE measurements and analysis determined the energy bandgaps in the 3.29-3.91 eV range, obeying a monotonically decreasing law with increasing . The theoretical bandgap of 3.347 eV, consistent with the SE-reported value, demonstrated the reliability of the SE measurement. Temperature-dependent UV-excitation Raman scattering revealed 1LO phonon splitting and temperature dependency. Zn-O and Zn-Zn atomic bonding lengths were deduced from EXAFS. It was revealed that the surface Mg amount increased with the increase in . These comprehensive studies provide valuable references for MgZnO and other advanced materials.
MgZnO具有可调节的带隙，并且可以在相对较低的温度下制备，这使其适用于开发光电器件。通过金属有机气相外延在蓝宝石上生长MgZnO（0.1）薄膜，生长温度为350 - 650°C，采用多种表征技术进行研究，如X射线衍射（XRD）、光谱椭偏仪（SE）、拉曼散射、扩展X射线吸收精细结构（EXAFS）以及第一性原理计算。深入研究了[原文此处缺失相关变量，推测可能是某个参数，暂用“ ”代替]对MgZnO薄膜的光学、结构和表面性质的影响。MgZnO（0002）衍射产生了近35°的XRD峰，而36.5°的弱峰表明存在MgO相分离。SE测量和分析确定了能带隙在3.29 - 3.91 eV范围内，随着[原文此处缺失相关变量，推测可能是某个参数，暂用“ ”代替]的增加遵循单调递减规律。理论带隙为3.347 eV，与SE报告的值一致，证明了SE测量的可靠性。温度相关的紫外激发拉曼散射揭示了1LO声子分裂和温度依赖性。从EXAFS推导得出Zn - O和Zn - Zn原子键长。结果表明，表面Mg含量随着[原文此处缺失相关变量，推测可能是某个参数，暂用“ ”代替]的增加而增加。这些综合研究为MgZnO和其他先进材料提供了有价值的参考。
