Yu Zhiqiang, Wang Qingcheng, Jia Jinhao, Kang Wenbo, Ou Meilian, Xu Zhimou
Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Molecules. 2024 Nov 27;29(23):5604. doi: 10.3390/molecules29235604.
Among the transition metal oxides, hematite (α-FeO) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-FeO nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-FeO nanowire array-based Au/α-FeO/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-FeO nanowire arrays. The as-prepared α-FeO nanowire array-based Au/α-FeO/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 10 s), and ultralow set voltage (V = +2.63 V) and reset voltage (V = -2 V). In addition, the space charge-limited conduction (SCLC) mechanism has been proposed to be in the high resistance state, and the formation and destruction of the conductive channels modulated by oxygen vacancies have been suggested to be responsible for the nonvolatile resistive switching behaviors of the Au/α-FeO/FTO memristors. Our results show the potential of the Au/α-FeO/FTO memristors in nonvolatile memory applications.
在过渡金属氧化物中，赤铁矿（α - Fe₂O₃）因其优异的物理和化学性质而被广泛用于忆阻器的制备。本文通过简便的水热法和在FTO衬底上的退火处理，制备了沿[110]方向择优取向的α - Fe₂O₃纳米线阵列，然后通过在制备好的α - Fe₂O₃纳米线阵列上电镀金电极，得到了基于α - Fe₂O₃纳米线阵列的Au/α - Fe₂O₃/FTO忆阻器。所制备的基于α - Fe₂O₃纳米线阵列的Au/α - Fe₂O₃/FTO忆阻器表现出稳定的非易失性双极电阻开关行为，具有约两个数量级的高电阻开关比、良好的电阻保持率（高达10 s）以及超低的设置电压（V = +2.63 V）和复位电压（V = -2 V）。此外，已提出空间电荷限制传导（SCLC）机制处于高电阻状态，并且由氧空位调制的导电通道的形成和破坏被认为是Au/α - Fe₂O₃/FTO忆阻器非易失性电阻开关行为的原因。我们的结果显示了Au/α - Fe₂O₃/FTO忆阻器在非易失性存储器应用中的潜力。
