Yang Peng, Zha Jiajia, Gao Guoyun, Zheng Long, Huang Haoxin, Xia Yunpeng, Xu Songcen, Xiong Tengfei, Zhang Zhuomin, Yang Zhengbao, Chen Ye, Ki Dong-Keun, Liou Juin J, Liao Wugang, Tan Chaoliang
College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, People's Republic of China.
Nanomicro Lett. 2022 Apr 19;14(1):109. doi: 10.1007/s40820-022-00852-2.
The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm V s at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .
缺乏具有高空穴迁移率的稳定p型范德华（vdW）半导体严重阻碍了低维材料进入工业领域的进程。尽管p型黑磷（bP）和碲（Te）已显示出有前景的空穴迁移率，但bP在环境条件下的不稳定性以及Te相对较低的空穴迁移率仍然是严峻的问题。在此，我们报道了在原子级平整的六方氮化硼（h-BN）上生长高质量的碲纳米带，用于高性能p型场效应晶体管（FET）。重要的是，基于碲的场效应晶体管在室温下展现出高达1370 cm² V⁻¹ s⁻¹的超高空穴迁移率，这可能为未来高性能p型二维场效应晶体管和金属氧化物半导体（p-MOS）逆变器奠定基础。范德华h-BN介电衬底不仅为高质量碲纳米带的生长提供了无悬键的超平整表面，还减少了沟道材料与介电层之间界面处的散射中心，从而实现了超高的空穴迁移率。
