Wu Zehan, Lyu Yongxin, Zhang Yi, Ding Ran, Zheng Beining, Yang Zhibin, Lau Shu Ping, Chen Xian Hui, Hao Jianhua
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China.
Nat Mater. 2021 Sep;20(9):1203-1209. doi: 10.1038/s41563-021-01001-7. Epub 2021 May 10.
Two-dimensional materials provide opportunities for developing semiconductor applications at atomistic thickness to break the limits of silicon technology. Black phosphorus (BP), as a layered semiconductor with controllable bandgap and high carrier mobility, is one of the most promising candidates for transistor devices at atomistic thickness. However, the lack of large-scale growth greatly hinders its development in devices. Here, we report the growth of ultrathin BP on the centimetre scale through pulsed laser deposition. The unique plasma-activated region induced by laser ablation provides highly desirable conditions for BP cluster formation and transportation, facilitating growth. Furthermore, we fabricated large-scale field-effect transistor arrays on BP films, yielding appealing hole mobility of up to 213 and 617 cm V s at 295 and 250 K, respectively. Our results pave the way for further developing BP-based wafer-scale devices with potential applications in the information industry.
二维材料为在原子尺度上开发半导体应用提供了机会，以突破硅技术的限制。黑磷（BP）作为一种具有可控带隙和高载流子迁移率的层状半导体，是原子尺度晶体管器件最有前途的候选材料之一。然而，缺乏大规模生长极大地阻碍了其在器件中的发展。在此，我们报告了通过脉冲激光沉积在厘米尺度上生长超薄黑磷。激光烧蚀诱导的独特等离子体激活区域为黑磷团簇的形成和传输提供了非常理想的条件，促进了生长。此外，我们在黑磷薄膜上制造了大规模场效应晶体管阵列，在295K和250K时分别产生了高达213和617 cm V s的诱人空穴迁移率。我们的结果为进一步开发基于黑磷的晶圆级器件铺平了道路，这些器件在信息产业中具有潜在应用。
